{"title":"Effect of holmium on structural and optical properties of sol–gel spin coating-derived cadmium oxide thin films","authors":"Seema Gupta, Rajesh Lalwani, Mukul Gupta","doi":"10.1007/s10854-024-13862-0","DOIUrl":null,"url":null,"abstract":"<div><p>In this work, the structural and optical characteristics of undoped and Ho-doped CdO thin films developed via the sol–gel spin coating method on a glass substrate are investigated for the first time. XRD spectra, UV–Vis spectroscopy, and photoluminescence spectra were used for analyzing the structural and spectroscopic characteristics of the films, respectively. X-ray diffraction spectra revealed the cubic structure and preferred orientation of the films, along with their polycrystalline nature. The scanning electron microscopy revealed the morphology of CdO thin films like granular and cauliflower structures. The composition of the present materials is shown in the EDX graph. Absorption spectra were used to estimate the optical band gap of CdO thin films. With a rise in Ho doping, the optical study revealed a considerable decrease in the optical bandgap energy and an increase in transmittance in the visible region. We also investigate and analyze the nonlinear optical constants. The photoluminescence spectra of CdO thin films revealed a green emission. The deposited thin films exhibited the maximum emission of white light, with color coordinates in the almost white light area.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"35 34","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2024-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-024-13862-0","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
In this work, the structural and optical characteristics of undoped and Ho-doped CdO thin films developed via the sol–gel spin coating method on a glass substrate are investigated for the first time. XRD spectra, UV–Vis spectroscopy, and photoluminescence spectra were used for analyzing the structural and spectroscopic characteristics of the films, respectively. X-ray diffraction spectra revealed the cubic structure and preferred orientation of the films, along with their polycrystalline nature. The scanning electron microscopy revealed the morphology of CdO thin films like granular and cauliflower structures. The composition of the present materials is shown in the EDX graph. Absorption spectra were used to estimate the optical band gap of CdO thin films. With a rise in Ho doping, the optical study revealed a considerable decrease in the optical bandgap energy and an increase in transmittance in the visible region. We also investigate and analyze the nonlinear optical constants. The photoluminescence spectra of CdO thin films revealed a green emission. The deposited thin films exhibited the maximum emission of white light, with color coordinates in the almost white light area.
本文首次研究了在玻璃基底上通过溶胶-凝胶旋涂法制备的未掺杂和掺杂 Ho 的氧化镉薄膜的结构和光学特性。X 射线衍射光谱、紫外可见光谱和光致发光光谱分别用于分析薄膜的结构和光谱特性。X 射线衍射光谱显示了薄膜的立方结构和优先取向,以及其多晶性质。扫描电子显微镜显示了氧化镉薄膜的形态,如颗粒状和菜花状结构。本材料的成分如 EDX 图所示。吸收光谱用于估算氧化镉薄膜的光带隙。随着 Ho 掺杂量的增加,光学研究显示光带隙能量显著降低,可见光区域的透射率增加。我们还研究和分析了非线性光学常数。氧化镉薄膜的光致发光光谱显示出绿色发射。沉积的薄膜显示出最大的白光发射,色坐标几乎在白光区域。
期刊介绍:
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.