Optimizing MPCVD systems for diamond growth through advanced microwave transmission theory

IF 1.7 4区材料科学 Q3 CRYSTALLOGRAPHY Journal of Crystal Growth Pub Date : 2024-11-19 DOI:10.1016/j.jcrysgro.2024.128008

Xiaobin Hao , Yicun Li , Xia Kong , Jilei Lyu , Kunlong Zhao , Jiwen Zhao , Sen Zhang , Dongyue Wen , Kang Liu , V.G. Ralchenko , Benjian Liu , Bing Dai , Jiaqi Zhu

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Abstract

Diamond, renowned for its exceptional properties, stands as the ultimate semiconductor material. Microwave plasma chemical vapor deposition (MPCVD) is pivotal in advancing diamond’s functional applications. The effectiveness of the MPCVD system hinges on the efficient transmission of microwave energy to the resonant cavity. Additionally, the system must form a large-area, high-intensity hemispherical standing-wave electric field in the deposition area. Thus, a well-conceived optimization design for the microwave transmission and resonance systems is imperative. This paper introduces a design methodology for MPCVD systems, aligning plasma requirements for diamond growth with the transmission and distribution characteristics of the microwave electromagnetic field, which means that system optimization can be achieved without the need for complex multiple physical fields simulations. The average electric field intensity up to 3.24 × 10⁵ V/m is obtained by using the dual-objective optimization function as the comprehensive optimization objective of the metal boundaries of the reactor. Based on simulation findings, an MPCVD system operating at 2450 MHz was designed, resulting in a single-crystal diamond with a high average growth rate of 11.5 μm/h. Further reduction of the microwave frequency to 915 MHz enabled the preparation of a 4-inch polycrystalline diamond film, achieving an average growth rate close to 3.5 μm/h.

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通过先进的微波传输理论优化用于金刚石生长的 MPCVD 系统

金刚石以其卓越的性能而闻名于世，是一种终极半导体材料。微波等离子体化学气相沉积（MPCVD）在推动金刚石的功能应用方面发挥着关键作用。微波等离子体化学气相沉积系统的有效性取决于向谐振腔高效传输微波能量。此外，系统还必须在沉积区域形成大面积、高强度的半球形驻波电场。因此，必须对微波传输和谐振系统进行周密的优化设计。本文介绍了 MPCVD 系统的设计方法，使金刚石生长的等离子体要求与微波电磁场的传输和分布特性相一致，这意味着无需复杂的多物理场模拟就能实现系统优化。利用双目标优化函数作为反应器金属边界的综合优化目标，可获得高达 3.24 × 105 V/m 的平均电场强度。根据模拟结果，设计了一种工作频率为 2450 MHz 的 MPCVD 系统，从而获得了平均生长速率高达 11.5 μm/h 的单晶金刚石。将微波频率进一步降低到 915 MHz 后，制备出了 4 英寸的多晶金刚石薄膜，平均生长速度接近 3.5 μm/h。

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来源期刊

Journal of Crystal Growth 化学-晶体学

CiteScore

3.60

自引率

11.10%

发文量

373

审稿时长

65 days

期刊介绍： The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.