Investigation of structural, morphological and spectral characteristics of double perovskite Sr2GdTaO6 phosphors doped with Eu3+, and co-doped Eu3+, B3+ having improved quantum efficiency

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Materials Science: Materials in Electronics Pub Date : 2024-11-27 DOI:10.1007/s10854-024-13832-6
Mustafa İlhan, Lütfiye Feray Güleryüz
{"title":"Investigation of structural, morphological and spectral characteristics of double perovskite Sr2GdTaO6 phosphors doped with Eu3+, and co-doped Eu3+, B3+ having improved quantum efficiency","authors":"Mustafa İlhan,&nbsp;Lütfiye Feray Güleryüz","doi":"10.1007/s10854-024-13832-6","DOIUrl":null,"url":null,"abstract":"<div><p>The increasing boron effect significantly enhanced the luminescence and asymmetry of double perovskite phosphor. The structural, morphological and spectral characteristics of Sr<sub>2</sub>Gd<sub>1−<i>x</i></sub>TaO<sub>6</sub>:<i>x</i>Eu<sup>3+</sup>, (<i>x</i> = 0.5–20 mol%) and Sr<sub>2</sub>Gd<sub>1−<i>x</i></sub>TaO<sub>6</sub>:<i>x</i>Eu<sup>3+</sup>, <i>y</i>B<sup>3+</sup> (<i>x</i> = 10 mol%, <i>y</i> = 0–100 mol%) phosphor series were examined in terms of Eu<sup>3+</sup> increase and B<sup>3+</sup> increase. In XRD results, Eu<sup>3+</sup> doped Sr<sub>2</sub>GdTaO<sub>6</sub> samples exhibited a single-phase up to 20 mol%, and slight impurity phase was formed at high concentration in Eu<sup>3+</sup>, B<sup>3+</sup> co-doped Sr<sub>2</sub>GdTaO<sub>6</sub> series. In SEM micrographs, there was no significant change in grain morphology of Eu<sup>3+</sup> doped grains, whereas the flux effect of boron led to grain growth in Eu<sup>3+</sup>, B<sup>3+</sup> co-doped samples. The optical band gap energy (<i>E</i><sub>g</sub>) varied in the range of 4.42–4.27 and 4.27–4.08 eV for Eu<sup>3+</sup> doped and Eu<sup>3+</sup>, B<sup>3+</sup> co-doped series, respectively. The maximum increases in emissions depending on Eu<sup>3+</sup> and B<sup>3+</sup> increase were 10 mol% for Sr<sub>2</sub>GdTaO<sub>6</sub>:Eu<sup>3+</sup> and 50 mol% for Sr<sub>2</sub>GdTaO<sub>6</sub>:Eu<sup>3+</sup>, B<sup>3+</sup>, respectively. The increased B<sup>3+</sup> concentration improved the electric dipole transition (<sup>5</sup>D<sub>0</sub> → <sup>7</sup>F<sub>2</sub>), and the asymmetry ratio increased from 0.35 to 2.65. Judd–Ofelt (JO) parameters were calculated from the emission spectrum, in which the <i>Ω</i><sub>2</sub> and <i>Ω</i><sub>4</sub> parameters for Sr<sub>2</sub>GdTaO<sub>6</sub>:Eu<sup>3+</sup> phosphors are close values, and both parameters increased in Sr<sub>2</sub>GdTaO<sub>6</sub>:Eu<sup>3+</sup>, B<sup>3+</sup>. The quantum efficiency of Sr<sub>2</sub>GdTaO<sub>6</sub>:Eu<sup>3+</sup> phosphors ranged between 49.82 and 93.08%, and the <i>ɳ</i><sub><b>QE</b></sub> values for Sr<sub>2</sub>GdTaO<sub>6</sub>:Eu<sup>3+</sup>, B<sup>3+</sup> exceeded 100%.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"35 34","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2024-11-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-024-13832-6","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

Abstract

The increasing boron effect significantly enhanced the luminescence and asymmetry of double perovskite phosphor. The structural, morphological and spectral characteristics of Sr2Gd1−xTaO6:xEu3+, (x = 0.5–20 mol%) and Sr2Gd1−xTaO6:xEu3+, yB3+ (x = 10 mol%, y = 0–100 mol%) phosphor series were examined in terms of Eu3+ increase and B3+ increase. In XRD results, Eu3+ doped Sr2GdTaO6 samples exhibited a single-phase up to 20 mol%, and slight impurity phase was formed at high concentration in Eu3+, B3+ co-doped Sr2GdTaO6 series. In SEM micrographs, there was no significant change in grain morphology of Eu3+ doped grains, whereas the flux effect of boron led to grain growth in Eu3+, B3+ co-doped samples. The optical band gap energy (Eg) varied in the range of 4.42–4.27 and 4.27–4.08 eV for Eu3+ doped and Eu3+, B3+ co-doped series, respectively. The maximum increases in emissions depending on Eu3+ and B3+ increase were 10 mol% for Sr2GdTaO6:Eu3+ and 50 mol% for Sr2GdTaO6:Eu3+, B3+, respectively. The increased B3+ concentration improved the electric dipole transition (5D0 → 7F2), and the asymmetry ratio increased from 0.35 to 2.65. Judd–Ofelt (JO) parameters were calculated from the emission spectrum, in which the Ω2 and Ω4 parameters for Sr2GdTaO6:Eu3+ phosphors are close values, and both parameters increased in Sr2GdTaO6:Eu3+, B3+. The quantum efficiency of Sr2GdTaO6:Eu3+ phosphors ranged between 49.82 and 93.08%, and the ɳQE values for Sr2GdTaO6:Eu3+, B3+ exceeded 100%.

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研究掺杂 Eu3+ 和共掺杂 Eu3+、B3+ 的双包晶 Sr2GdTaO6 磷光体的结构、形态和光谱特性,以提高其量子效率
硼效应的增加极大地增强了双过氧化物荧光粉的发光性能和非对称性。研究了 Sr2Gd1-xTaO6:xEu3+, (x = 0.5-20 mol%)和 Sr2Gd1-xTaO6:xEu3+, yB3+ (x = 10 mol%,y = 0-100 mol%)荧光粉系列在 Eu3+ 增加和 B3+ 增加时的结构、形态和光谱特征。在 XRD 结果中,掺杂 Eu3+ 的 Sr2GdTaO6 样品在 20 mol% 以下呈现单相,而在高浓度的 Eu3+、B3+ 共掺杂 Sr2GdTaO6 系列中形成了轻微的杂质相。在扫描电镜显微照片中,掺杂 Eu3+ 的晶粒形貌没有明显变化,而在 Eu3+、B3+ 共掺杂样品中,硼的通量效应导致晶粒长大。掺杂 Eu3+ 和 Eu3+、B3+ 共掺杂系列的光带隙能 (Eg) 分别在 4.42-4.27 和 4.27-4.08 eV 范围内变化。随着 Eu3+ 和 B3+ 浓度的增加,Sr2GdTaO6:Eu3+ 和 Sr2GdTaO6:Eu3+, B3+ 的发射率最大增幅分别为 10 摩尔%和 50 摩尔%。B3+ 浓度的增加改善了电偶极子转变(5D0 → 7F2),不对称比从 0.35 增加到 2.65。根据发射光谱计算出了 Judd-Ofelt (JO) 参数,其中 Sr2GdTaO6:Eu3+ 磷光体的 Ω2 和 Ω4 参数值比较接近,而 Sr2GdTaO6:Eu3+, B3+ 的两个参数值都有所增加。Sr2GdTaO6:Eu3+ 荧光粉的量子效率介于 49.82% 和 93.08% 之间,而 Sr2GdTaO6:Eu3+, B3+ 的ɳQE 值超过了 100%。
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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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