Enhanced dual frequency microwave absorption performance of magnetic-dielectric multi-interface regulated MWCNTS/MnFe2O4/Fe3O4/Co quaternary nanocomposite

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Materials Science: Materials in Electronics Pub Date : 2024-12-09 DOI:10.1007/s10854-024-14006-0
Bahroz Rashid, Zakir Hussain
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Abstract

The present study focuses on the development of radar-absorbing materials (RAM) for electromagnetic interference shielding. Herein, we report on the synthesis of MnFe2O4, Fe3O4, and cobalt (Co) nanoparticles and their nanocomposites with multi-walled carbon nanotubes (MWCNTs). Characterization techniques including XRD, SEM and VSM were used to confirm the successful formation of nanoparticles and their composites. The nanocomposites showed strong radar absorption properties in the frequency range of 1–20 GHz due to the synergistic effect of MWCNTs and magnetic nanoparticles. Among other nanocomposites, MWCNTs/Fe3O4 demonstrated an extremely high electromagnetic wave absorption with a reflection loss min value of − 35.22 dB at 14.2 GHz and RL min of − 16.74 dB at 19.17 GHz. This study offers insights into designing advanced RAM, highlighting potential for next-gen electromagnetic wave absorbers.

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磁介电多界面调控MWCNTS/MnFe2O4/Fe3O4/Co季元纳米复合材料的双频微波吸收性能增强
本文的研究重点是用于电磁干扰屏蔽的雷达吸波材料的研制。本文报道了MnFe2O4、Fe3O4和钴(Co)纳米粒子的合成及其与多壁碳纳米管(MWCNTs)的纳米复合材料。利用XRD、SEM和VSM等表征技术,证实了纳米颗粒及其复合材料的成功形成。由于纳米碳纳米管和磁性纳米颗粒的协同作用,纳米复合材料在1-20 GHz频率范围内表现出较强的雷达吸收性能。在其他纳米复合材料中,MWCNTs/Fe3O4表现出极高的电磁波吸收,在14.2 GHz时反射损耗最小值为−35.22 dB,在19.17 GHz时RL最小值为−16.74 dB。这项研究为设计先进的RAM提供了见解,突出了下一代电磁波吸收器的潜力。
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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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