SnO2 nanosheet with N-doped graphene layer coating as a highly sensitive material to formaldehyde gas at ppb level

IF 2.8 4区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Materials Science: Materials in Electronics Pub Date : 2024-12-20 DOI:10.1007/s10854-024-14075-1

Jing Lu, Jingjing Zhu, Yajun Wang, Zijin Fu, Rongrong Wang, Liangliang Feng, Jianfeng Huang

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Abstract

The tin dioxide nanosheet coated by N-doped graphene (SnO₂@NGO) as a formaldehyde sensing material is prepared by a hydrothermal method. The coating of NGO thin layer on SnO₂ forms a porous coating-nanosheet structure composite with a remarkable large heterogeneous interface. It promotes gas adsorption, carrier transport, and the final sensing performances significantly. The as-prepared SnO₂@NGO shows a linear response to formaldehyde at ppb level concentration. The response value to 500 ppb formaldehyde is 9.8, which is about 7 times that of ethanol, ammonia and acetone. Such excellent selectivity and sensitivity are attributed to the following aspects: (i) active adsorption of oxygen by (110) oriented SnO₂; (ii) selective adsorption of formaldehyde by the porous NGO layer; (iii) catalytic effect on redox reactions between HCHO and O₂⁻ by the pyridinic-N structure; (iv) efficient carrier transport through the spacious heterogeneous interfaces. The coating strategy provides a new insight into designing ultra-sensitive heterogeneous materials.

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来源期刊

Journal of Materials Science: Materials in Electronics 工程技术-材料科学：综合

CiteScore

5.00

自引率

7.10%

发文量

1931

审稿时长

2 months

期刊介绍： The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.