(1-x)MgTi2O5–xCaTiO3 microwave dielectric composites with near–zero temperature coefficient of resonant frequency

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Materials Science: Materials in Electronics Pub Date : 2024-12-20 DOI:10.1007/s10854-024-14083-1
Zuo Yi Li, Lei Li, Xing Yu Chen, Xiao Jian Yan, Xiang Ming Chen
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Abstract

MgTiO3 and Mg2TiO4 are important commercial microwave dielectric ceramics, while MgTi2O5 ceramic as the last stable phase in MgOTiO2 binary phase diagram has not attracted similar attention. In this study, MgTi2O5 ceramics were prepared by solid-state sintering, and the optimal microwave dielectric properties with εr = 18.6, Qf = 53,000 GHz, and τf = − 48.8 ppm/℃ were obtained for the sintering temperature of 1250 °C. CaTiO3 with a large positive τf was further introduced to compensate the large negative τf of MgTi2O5, and the optimal microwave dielectric properties of εr = 22.7, Qf = 39,900 GHz, and τf = 4.9 ppm/℃ were obtained in 0.9MgTi2O5–0.1CaTiO3 composite sintered at 1250 °C. Although the Qf value of the present 0.9MgTi2O5–0.1CaTiO3 composite is lower than that of the commercial MgTiO3–CaTiO3 counterpart with near-zero τf, it is expected to be improved by eliminating the color centers caused by oxygen deficiencies in MgTi2O5. Besides, the 0.9MgTi2O5–0.1CaTiO3 composite has a higher εr and a lower sintering temperature, indicating its potential application prospects in future microwave communications.

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(1-x)谐振频率温度系数接近零的MgTi2O5-xCaTiO3微波介电复合材料
MgTiO3和Mg2TiO4是重要的商用微波介质陶瓷,而MgTi2O5陶瓷作为MgO-TiO2二元相图中的最后一个稳定相并没有引起类似的关注。本研究采用固态烧结法制备了MgTi2O5陶瓷,在1250℃的烧结温度下,获得了最佳的微波介电性能,εr = 18.6, Qf = 53,000 GHz, τf =−48.8 ppm/℃。引入较大的正τf的CaTiO3来补偿MgTi2O5较大的负τf,在1250℃下烧结得到0.9MgTi2O5 - 0.1 1catio3复合材料的最佳微波介电性能εr = 22.7, Qf = 39900 GHz, τf = 4.9 ppm/℃。虽然0.9MgTi2O5 - 0.1 1catio3复合材料的Qf值低于商品MgTiO3-CaTiO3复合材料,τf值接近于零,但通过消除MgTi2O5中缺氧引起的色心,有望提高Qf值。此外,0.9 mgti2o5 - 0.1 1catio3复合材料具有较高的εr和较低的烧结温度,表明其在未来微波通信中的潜在应用前景。
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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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