Zhang Shan, Song Xin, Gao Xing, Lu Chunxiao, Han Pei, Liu Yunying, Li Xiaowei, Zhang Junyan, Li Yong
{"title":"Ho doping-induced ferroelectric polarization enhances UV photodetector performance of YbMnO3","authors":"Zhang Shan, Song Xin, Gao Xing, Lu Chunxiao, Han Pei, Liu Yunying, Li Xiaowei, Zhang Junyan, Li Yong","doi":"10.1007/s10854-024-14094-y","DOIUrl":null,"url":null,"abstract":"<div><p>The ferroelectric photovoltaic (PE-PV) effect has been extensively explored and plays a crucial role in constructing self-powered photodetectors. Ferroelectric materials have been attracting great interest in self-powered ultraviolet (UV) photodetectors due to their polarization-induced photovoltaic effect. In this paper, the ultraviolet self-powered photodetection properties of polycrystalline rare-earth Yb<sub>1-x</sub>Ho<sub>x</sub>MnO<sub>3</sub> (0 ≤ x ≤ 0.08, Δx = 0.02) ferroelectric materials have been investigated. The substitution of Ho atoms for Mn atoms has a great influence on the ferroelectric polarization, and Ho doping increases the photocurrent density. The photodetectors show excellent reproducibility responsivity (R) and detectivity (D*) under illumination at 365 nm. In addition, at the light density of 1 mW/cm<sup>2</sup>, the responsivity and detectivity of the photodetectors are as high as 0.09 W/A and 3.359 × 10<sup>11</sup> Jones, respectively. These outstanding photodetection performances are due to the relatively high short-circuit current density (<i>J</i><sub>sc</sub>). High <i>J</i><sub>sc</sub> implies that more photogenerated carriers can be produced under illumination, which makes the device more sensitive to optical signals. This study presents a feasible method for improving the light-detection performance of the ultraviolet self-powered detector.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 1","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2024-12-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-024-14094-y","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
The ferroelectric photovoltaic (PE-PV) effect has been extensively explored and plays a crucial role in constructing self-powered photodetectors. Ferroelectric materials have been attracting great interest in self-powered ultraviolet (UV) photodetectors due to their polarization-induced photovoltaic effect. In this paper, the ultraviolet self-powered photodetection properties of polycrystalline rare-earth Yb1-xHoxMnO3 (0 ≤ x ≤ 0.08, Δx = 0.02) ferroelectric materials have been investigated. The substitution of Ho atoms for Mn atoms has a great influence on the ferroelectric polarization, and Ho doping increases the photocurrent density. The photodetectors show excellent reproducibility responsivity (R) and detectivity (D*) under illumination at 365 nm. In addition, at the light density of 1 mW/cm2, the responsivity and detectivity of the photodetectors are as high as 0.09 W/A and 3.359 × 1011 Jones, respectively. These outstanding photodetection performances are due to the relatively high short-circuit current density (Jsc). High Jsc implies that more photogenerated carriers can be produced under illumination, which makes the device more sensitive to optical signals. This study presents a feasible method for improving the light-detection performance of the ultraviolet self-powered detector.
期刊介绍：
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
