Comparative investigation of Co, Fe, Ni ion and protons radiation damage in oxide optimized Si-MOS capacitive radiation sensor using Monte Carlo simulation

Abstract

This paper presents a sensor based on commercial semi-conductor laboratory 180 nm complementary metal–oxide–semiconductor technology. Sensor can detect total ionizing dose on metal–oxide–semiconductor devices. Simulation and mathematical study determined the sensor optimized oxide thickness at 20 nm. Sensor radiation doses range from 100 rad to 1 Mrad, including low and high levels. Considering threshold voltage shift of capacitive sensor as a sensitivity parameter, the sensor’s sensitivity is 20, 3.9 and 0.6 mV/krad for 0–10 krad, 10 krad—100 krad and 100 krad—1 Mrad radiation doses respectively. The capacitive radiation sensor was designed, analysed, and evaluated using Visual TCAD simulation. Proton and Cobalt, Iron, and Nickel ions produce radiation damage, as simulated by stopping and range of ions in matter simulator. This simulation was conducted to calculated energy loss, vacancy fluctuation, nuclear stopping power, and electronic stopping power. Displacement per atom was calculated at various proton/ion energies and irradiation fluences. The observation demonstrates a direct relationship between the energy of protons/ions and the concentration of their trajectory. The vacancies concentration is higher with low-energy proton/ion irradiation than with high-energy. This is due to material interaction with lower cross section and lattice atom energy transmission. The decrease in displacement damage is observed as the projected range increases, suggesting that the proton/ion irradiation is the cause of this damage and that it decreases as the proton energy increases.