Room-Temperature Magnetic Antiskyrmions in Canted Ferrimagnetic CoHo Alloy Films

IF 26.8 1区 材料科学 Q1 CHEMISTRY, MULTIDISCIPLINARY Advanced Materials Pub Date : 2025-01-10 DOI:10.1002/adma.202413700
Jingyan Zhang, Pengwei Dou, Jiawang Xu, Jialiang Jiang, Haifeng Du, Tao Zhu, Jia Luo, Guoping Zhao, Yuanbo Wang, Quangao Qiu, Liangyu Feng, Xiao Deng, Tianping Ma, Shiming Zhou, Baogen Shen, Shouguo Wang
{"title":"Room-Temperature Magnetic Antiskyrmions in Canted Ferrimagnetic CoHo Alloy Films","authors":"Jingyan Zhang,&nbsp;Pengwei Dou,&nbsp;Jiawang Xu,&nbsp;Jialiang Jiang,&nbsp;Haifeng Du,&nbsp;Tao Zhu,&nbsp;Jia Luo,&nbsp;Guoping Zhao,&nbsp;Yuanbo Wang,&nbsp;Quangao Qiu,&nbsp;Liangyu Feng,&nbsp;Xiao Deng,&nbsp;Tianping Ma,&nbsp;Shiming Zhou,&nbsp;Baogen Shen,&nbsp;Shouguo Wang","doi":"10.1002/adma.202413700","DOIUrl":null,"url":null,"abstract":"<p>Magnetic antiskyrmions, the anti-quasiparticles of magnetic skyrmions, possess alternating Bloch- and Néel-type spin spirals, rendering them promising for advanced spintronics-based information storage. To date, antiskyrmions are demonstrated in a few bulk materials featuring anisotropic Dzyaloshinskii–Moriya interactions and a limited number of artificial multilayers. Identifying novel film materials capable of hosting isolated antiskyrmions is critical for memory applications in topological spintronics. Herein, the formation of room-temperature antiskyrmions in single ferrimagnetic CoHo rare-metal alloy films of varying thicknesses, observed using Lorentz transmission electron microscopy is reported. Furthermore, rotating magnetic fields (<i>H</i>) are proposed to facilitate antiskyrmion nucleation and enhance their areal density by an order of magnitude compared to that in the same area under individual vertical <i>H</i>. In addition, experimental and phenomenological analysis confirm that antiskyrmion nucleation can be attributed to spin reorientation involving spontaneous canted magnetism, as evidenced by polarized neutron reflectometry. Micromagnetic simulations further show that the antiskyrmion density significantly depends on the magnitude of the rotating field. These findings expand the family of known antiskyrmion-hosting materials and provide insights into their formation mechanisms, thus serving as a basis for their application in topological spintronics.</p>","PeriodicalId":114,"journal":{"name":"Advanced Materials","volume":"37 8","pages":""},"PeriodicalIF":26.8000,"publicationDate":"2025-01-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advanced Materials","FirstCategoryId":"88","ListUrlMain":"https://advanced.onlinelibrary.wiley.com/doi/10.1002/adma.202413700","RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"CHEMISTRY, MULTIDISCIPLINARY","Score":null,"Total":0}
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Abstract

Magnetic antiskyrmions, the anti-quasiparticles of magnetic skyrmions, possess alternating Bloch- and Néel-type spin spirals, rendering them promising for advanced spintronics-based information storage. To date, antiskyrmions are demonstrated in a few bulk materials featuring anisotropic Dzyaloshinskii–Moriya interactions and a limited number of artificial multilayers. Identifying novel film materials capable of hosting isolated antiskyrmions is critical for memory applications in topological spintronics. Herein, the formation of room-temperature antiskyrmions in single ferrimagnetic CoHo rare-metal alloy films of varying thicknesses, observed using Lorentz transmission electron microscopy is reported. Furthermore, rotating magnetic fields (H) are proposed to facilitate antiskyrmion nucleation and enhance their areal density by an order of magnitude compared to that in the same area under individual vertical H. In addition, experimental and phenomenological analysis confirm that antiskyrmion nucleation can be attributed to spin reorientation involving spontaneous canted magnetism, as evidenced by polarized neutron reflectometry. Micromagnetic simulations further show that the antiskyrmion density significantly depends on the magnitude of the rotating field. These findings expand the family of known antiskyrmion-hosting materials and provide insights into their formation mechanisms, thus serving as a basis for their application in topological spintronics.

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倾斜铁磁CoHo合金薄膜中的室温磁性反天子
磁性反斯基米子是磁性斯基米子的反准粒子,具有交替的布洛赫型和纳姆伊尔型自旋螺旋,使它们有望用于先进的基于自旋电子学的信息存储。迄今为止,反skyrmions已经在一些具有各向异性Dzyaloshinskii-Moriya相互作用和有限数量的人工多层材料的块状材料中得到了证明。在拓扑自旋电子学中,识别能够承载孤立反粒子的新型薄膜材料对于存储应用至关重要。本文报道了用洛伦兹透射电镜观察不同厚度的CoHo单铁磁稀有金属合金薄膜中室温反天子的形成。此外,旋转磁场(H)促进了反斯基米子的成核,并使其面密度比单个垂直H下的相同区域提高了一个数量级。此外,实验和现象学分析证实,极化中子反射法证实了反斯基米子的成核可以归因于自发倾斜磁的自旋重取向。微磁模拟进一步表明,反斯基米子密度显著依赖于旋转场的大小。这些发现扩大了已知的反skyrμ子承载材料家族,并提供了对其形成机制的见解,从而为其在拓扑自旋电子学中的应用奠定了基础。
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来源期刊
Advanced Materials
Advanced Materials 工程技术-材料科学:综合
CiteScore
43.00
自引率
4.10%
发文量
2182
审稿时长
2 months
期刊介绍: Advanced Materials, one of the world's most prestigious journals and the foundation of the Advanced portfolio, is the home of choice for best-in-class materials science for more than 30 years. Following this fast-growing and interdisciplinary field, we are considering and publishing the most important discoveries on any and all materials from materials scientists, chemists, physicists, engineers as well as health and life scientists and bringing you the latest results and trends in modern materials-related research every week.
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