Effect of Ar ion beam treatment on the interfacial adhesion between a fluorinated ethylene propylene (FEP) film and sputtered Cu

IF 6.3 2区 材料科学 Q2 CHEMISTRY, PHYSICAL Applied Surface Science Pub Date : 2025-01-17 DOI:10.1016/j.apsusc.2025.162432
Jun-Yeong Yang, Seunghun Lee, Eun-Yeon Byeon, Joo Young Park, Do-geun Kim, Seungyeon Hong, Sung Hun Lee, Hyo Jung Kim, Sunghoon Jung
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Abstract

Low-loss flexible copper-clad laminates are required for next-generation ultra-high-frequency communication systems, and fluorinated polymers are one of the good dielectric candidates due to its excellent dielectric properties. However, this necessitates ensuring high adhesion between Cu and the fluorinated polymers that commonly indicate surface inertness. This study investigates the effects of Ar ion beam treatment on the interfacial adhesion between fluorinated ethylene propylene (FEP) films and Cu layers deposited via magnetron sputtering. We increased the accumulated Ar ion dose from 9.8 × 1014 to 8.6 × 1015 ions/cm2, and the maximum peel strength between FEP and Cu was recorded to be 7.4 ± 0.26 N/cm at an ion dose of 5.9 × 1015 ions/cm2 on FEP. Surface characterization revealed that in all samples, the initial delamination occurred within the FEP surface, regardless of the Ar ion dose. Interfacial adhesion of Cu/FEP was attributed to the reinforced mechanical properties of the FEP via increased surface roughness and crystallinity. These findings will contribute to ensuring the reliable interfacial adhesion of Cu/FEP systems for high-frequency communications.

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来源期刊
Applied Surface Science
Applied Surface Science 工程技术-材料科学:膜
CiteScore
12.50
自引率
7.50%
发文量
3393
审稿时长
67 days
期刊介绍: Applied Surface Science covers topics contributing to a better understanding of surfaces, interfaces, nanostructures and their applications. The journal is concerned with scientific research on the atomic and molecular level of material properties determined with specific surface analytical techniques and/or computational methods, as well as the processing of such structures.
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