Xingyu Pan, Sheng Zhao, Lin Qi, Xiaobin He, Jing Wan, Hailong Li
{"title":"Random vibration lifetime prediction model based on overshoot correction for metal hermetic sealing structure considering transient response","authors":"Xingyu Pan, Sheng Zhao, Lin Qi, Xiaobin He, Jing Wan, Hailong Li","doi":"10.1007/s10854-025-14255-7","DOIUrl":null,"url":null,"abstract":"<div><p>Referring to the concept of overshoot in automatic control principle, this paper proposes a novel random vibration lifetime prediction model based on traditional Miner’s rule, which accounts for the transient response due to changes in the vibration amplitude of the input excitation. Additionally, a time-domain method for applying this model is introduced and employed to evaluate the random vibration lifetime of metal hermetic sealing structure. The power spectral density (PSD) of the response stress, obtained from finite element analysis (FEA) under random vibration, is converted into multiple time-history datasets through phase randomization and inverse fast Fourier transform (IFFT), followed by rainflow cycle counting to simplify the datasets into statistical combinations of different amplitudes and mean stress values. The time-domain dynamic performance indicator <i>τ</i>, calculated through explicit dynamic analysis with a value of 0.136, is used to characterize the system's overshoot and incorporated as a correction coefficient in the damage lifetime calculation formula. The predicted lifetimes based on different models are compared with experimental result and the prediction error of traditional Miner’s rule without overshoot correction is 5.8%. While the overall overshoot correction model tends to overestimate damage, with an error of 6.9%. The partial overshoot correction model, based on the mean value of amplitude differences, outperforms other models in accuracy and generality, reducing the error to 1.4%.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 3","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2025-01-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-025-14255-7","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
Referring to the concept of overshoot in automatic control principle, this paper proposes a novel random vibration lifetime prediction model based on traditional Miner’s rule, which accounts for the transient response due to changes in the vibration amplitude of the input excitation. Additionally, a time-domain method for applying this model is introduced and employed to evaluate the random vibration lifetime of metal hermetic sealing structure. The power spectral density (PSD) of the response stress, obtained from finite element analysis (FEA) under random vibration, is converted into multiple time-history datasets through phase randomization and inverse fast Fourier transform (IFFT), followed by rainflow cycle counting to simplify the datasets into statistical combinations of different amplitudes and mean stress values. The time-domain dynamic performance indicator τ, calculated through explicit dynamic analysis with a value of 0.136, is used to characterize the system's overshoot and incorporated as a correction coefficient in the damage lifetime calculation formula. The predicted lifetimes based on different models are compared with experimental result and the prediction error of traditional Miner’s rule without overshoot correction is 5.8%. While the overall overshoot correction model tends to overestimate damage, with an error of 6.9%. The partial overshoot correction model, based on the mean value of amplitude differences, outperforms other models in accuracy and generality, reducing the error to 1.4%.
期刊介绍:
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.