Fabricating In2O3 NPs /MWCNTs heterostructure photodetectors by laser ablation method

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Materials Science: Materials in Electronics Pub Date : 2025-01-22 DOI:10.1007/s10854-025-14241-z
Hawraa M. Abdul-Redaa, Khawla S. Khashan, Aseel A. Hadi, Raid A. Ismail
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Abstract

In this study, we used a one-step laser ablation method to combine In2O3 colloidal nanoparticles with multi-walled carbon nanotubes (MWCNTs) to create an In2O3 NPs-MWCNTs heterostructure for photodetectors. X-Ray Diffraction (XRD) analysis of the prepared samples revealed that the In2O3 NPs/MWCNTs nanostructure contained graphite peak at the (002) plane and In2O3 NPs crystalline peaks which are indexed to body-centred cubic phase. Transmission electron microscope (TEM) investigation revealed that In2O3 nanoparticles have a spherical shape nanoparticle with an average size of 20 nm, and 33 nm for In2O3 NPs -MWCNTs nanostructure. UV–Vis test showed that the optical energy gap of the In2O3 NPs decreased from 3.2 to 2.7 eV after incorporating CNTs. The I–V characteristics for the In2O3 NPs/Si and In2O3 NPs-decorated MWCNTs/Si photodetector were investigated under both dark and illumination cases. The responsivity of the In2O3 NPs/Si photodetector showed an increase from 0.43 to 1.15 A/W after introducing CNTs at a wavelength of 450 nm. The fabricated photodetector showed a high sensitivity for Vis–NIR detection. The limit detection of In2O3 NPs -MWCNTs/Si photodetector was determined to be 3.39 × 1011 Jones at 450 nm.

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激光烧蚀法制备In2O3 NPs /MWCNTs异质结构光电探测器
在这项研究中,我们使用一步激光烧蚀方法将In2O3胶体纳米颗粒与多壁碳纳米管(MWCNTs)结合,形成用于光电探测器的In2O3 NPs-MWCNTs异质结构。对制备的样品进行x射线衍射(XRD)分析表明,In2O3 NPs/MWCNTs纳米结构在(002)平面上含有石墨峰,In2O3 NPs的结晶峰指向体心立方相。透射电子显微镜(TEM)研究表明,In2O3纳米颗粒具有平均尺寸为20 nm的球形纳米颗粒,In2O3 NPs -MWCNTs的纳米结构为33 nm。UV-Vis测试表明,加入CNTs后,In2O3 NPs的光能隙从3.2 eV减小到2.7 eV。研究了In2O3 NPs/Si和In2O3 NPs修饰的MWCNTs/Si光电探测器在黑暗和光照条件下的I-V特性。在450 nm波长处引入碳纳米管后,In2O3 NPs/Si光电探测器的响应率从0.43提高到1.15 A/W。所制备的光电探测器具有较高的可见光-近红外探测灵敏度。测定了In2O3 NPs -MWCNTs/Si光电探测器在450 nm处的检出限为3.39 × 1011 Jones。
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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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