{"title":"Structural and optical characterization of deposition duration varied chemically deposited nanostructured ZnSSe thin films","authors":"Mridusmita Boruah, Saujanya Adhyapak, Alok Kumar Das, Himanshu Sharma Pathok, Prasanta Kumar Saikia","doi":"10.1007/s10854-025-14254-8","DOIUrl":null,"url":null,"abstract":"<div><p>In this work, ternary zinc sulphoselenide (ZnSSe) thin films were prepared using a cost-effective chemical technique on glass substrates by varying the deposition period at a bath temperature of 70 °C. The X-ray diffraction analysis revealed the nanocrystalline nature of the films, with a cubic zinc blende structure and a preferential orientation along the (111) plane. The crystallite sizes increase from 17 to 28 nm with an increase in deposition time. The field emission scanning electron microscope micrographs displayed uniformly distributed spherical nano-shaped grains across the substrate. Energy-dispersive X-ray analysis was used to obtain the chemical composition of the films. The optical analysis showed that all the films exhibit 70%–80% transmittance, and the optical energy band gap decreases from 3.23 to 3.16 eV with increasing deposition time. The observed intriguing properties of ZnSSe thin films prove their importance in a wide range of optoelectronic device applications.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 3","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2025-01-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-025-14254-8","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
In this work, ternary zinc sulphoselenide (ZnSSe) thin films were prepared using a cost-effective chemical technique on glass substrates by varying the deposition period at a bath temperature of 70 °C. The X-ray diffraction analysis revealed the nanocrystalline nature of the films, with a cubic zinc blende structure and a preferential orientation along the (111) plane. The crystallite sizes increase from 17 to 28 nm with an increase in deposition time. The field emission scanning electron microscope micrographs displayed uniformly distributed spherical nano-shaped grains across the substrate. Energy-dispersive X-ray analysis was used to obtain the chemical composition of the films. The optical analysis showed that all the films exhibit 70%–80% transmittance, and the optical energy band gap decreases from 3.23 to 3.16 eV with increasing deposition time. The observed intriguing properties of ZnSSe thin films prove their importance in a wide range of optoelectronic device applications.
期刊介绍:
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.