Structural and optical characterization of deposition duration varied chemically deposited nanostructured ZnSSe thin films

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Materials Science: Materials in Electronics Pub Date : 2025-01-22 DOI:10.1007/s10854-025-14254-8
Mridusmita Boruah, Saujanya Adhyapak, Alok Kumar Das, Himanshu Sharma Pathok, Prasanta Kumar Saikia
{"title":"Structural and optical characterization of deposition duration varied chemically deposited nanostructured ZnSSe thin films","authors":"Mridusmita Boruah,&nbsp;Saujanya Adhyapak,&nbsp;Alok Kumar Das,&nbsp;Himanshu Sharma Pathok,&nbsp;Prasanta Kumar Saikia","doi":"10.1007/s10854-025-14254-8","DOIUrl":null,"url":null,"abstract":"<div><p>In this work, ternary zinc sulphoselenide (ZnSSe) thin films were prepared using a cost-effective chemical technique on glass substrates by varying the deposition period at a bath temperature of 70 °C. The X-ray diffraction analysis revealed the nanocrystalline nature of the films, with a cubic zinc blende structure and a preferential orientation along the (111) plane. The crystallite sizes increase from 17 to 28 nm with an increase in deposition time. The field emission scanning electron microscope micrographs displayed uniformly distributed spherical nano-shaped grains across the substrate. Energy-dispersive X-ray analysis was used to obtain the chemical composition of the films. The optical analysis showed that all the films exhibit 70%–80% transmittance, and the optical energy band gap decreases from 3.23 to 3.16 eV with increasing deposition time. The observed intriguing properties of ZnSSe thin films prove their importance in a wide range of optoelectronic device applications.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 3","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2025-01-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-025-14254-8","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
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Abstract

In this work, ternary zinc sulphoselenide (ZnSSe) thin films were prepared using a cost-effective chemical technique on glass substrates by varying the deposition period at a bath temperature of 70 °C. The X-ray diffraction analysis revealed the nanocrystalline nature of the films, with a cubic zinc blende structure and a preferential orientation along the (111) plane. The crystallite sizes increase from 17 to 28 nm with an increase in deposition time. The field emission scanning electron microscope micrographs displayed uniformly distributed spherical nano-shaped grains across the substrate. Energy-dispersive X-ray analysis was used to obtain the chemical composition of the films. The optical analysis showed that all the films exhibit 70%–80% transmittance, and the optical energy band gap decreases from 3.23 to 3.16 eV with increasing deposition time. The observed intriguing properties of ZnSSe thin films prove their importance in a wide range of optoelectronic device applications.

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化学沉积纳米结构ZnSSe薄膜的结构和光学特性研究
在本研究中,通过改变镀液温度为70°C的沉积时间,采用一种具有成本效益的化学技术在玻璃衬底上制备了三元亚硒化锌(ZnSSe)薄膜。x射线衍射分析表明薄膜具有纳米晶性质,具有立方锌闪锌矿结构和沿(111)平面的优先取向。随着沉积时间的延长,晶体尺寸从17 nm增大到28 nm。场发射扫描电镜显微图显示了均匀分布在衬底上的球形纳米颗粒。利用能量色散x射线分析得到了薄膜的化学成分。光学分析表明,随着沉积时间的增加,薄膜的透过率均为70% ~ 80%,光能带隙从3.23 eV减小到3.16 eV。观察到的ZnSSe薄膜的有趣性质证明了它们在广泛的光电器件应用中的重要性。
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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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