SiC MOSFET with Integrated SBD Device Performance Prediction Method Based on Neural Network.

Abstract

The SiC MOSFET with an integrated SBD (SBD-MOSFET) exhibits excellent performance in power electronics. However, the static and dynamic characteristics of this device are influenced by a multitude of parameters, and traditional TCAD simulation methods are often characterized by their complexity. Due to the increasing research on neural networks in recent years, such as the application of neural networks to the prediction of GaN JBS and Finfet devices, this paper considers the application of neural networks to the performance prediction of SiC MOSFET devices with an integrated SBD. This study introduces a novel approach utilizing neural network machine learning to predict the static and dynamic characteristics of the SBD-MOSFET. In this research, SBD-MOSFET devices are modeled and simulated using Sentaurus TCAD(2017) software, resulting in the generation of 625 sets of device structure and sample data, which serve as the sample set for the neural network. These input variables are then fed into the neural network for prediction. The findings indicate that the mean square error (MSE) values for the threshold voltage (Vth), breakdown voltage (BV), specific on-resistance (R_on), and total switching power dissipation (E) are 0.0051, 0.0031, 0.0065, and 0.0220, respectively, demonstrating a high degree of accuracy in the predicted values. Meanwhile, in the comparison of convolutional neural networks and machine learning, the CNN accuracy is much higher than the machine learning methods. This method of predicting device performance via neural networks offers a rapid means of designing SBD-MOSFETs with specified performance targets, thereby presenting significant advantages in accelerating research on SBD-MOSFET performance prediction.