Improving the Selectivity of Metal Oxide Semiconductor Sensors for Mustard Gas Simulant 2-Chloroethyl Ethyl Sulfide by Combining the Laminated Structure and Temperature Dynamic Modulation.

Abstract

Insufficient selectivity is a major constraint to the further development of metal oxide semiconductor (MOS) sensors for chemical warfare agents, and this paper proposed an improved scheme combining catalytic layer/gas-sensitive layer laminated structure with temperature dynamic modulation for the Mustard gas (HD) MOS sensor. Mustard gas simulant 2-Chloroethyl ethyl sulfide (2-CEES) was used as the target gas, (Pt + Pd + Rh)@Al₂O₃ as the catalytic layer material, (Pt + Rh)@WO₃ as the gas-sensitive layer material, the (Pt + Pd + Rh)@Al₂O₃/(Pt + Rh)@WO₃ sensor was prepared, and the sensor was tested for 2-CEES and 12 battlefield environment simulation gases under temperature dynamic modulation. The results showed that the sensor only showed obvious characteristic peaks in the resistance response curves to HD under certain conditions (100-400 °C, the highest temperature was held for 1 s and the lowest temperature was held for 2 s), and its peak height reached 6.12, which was far higher than other gases, thus realizing the high selectivity of the MOS sensor to 2-CEES. Meanwhile, the sensor also showed good sensitivity, detection limits, response/recovery times, anti-interference, and stability, which further verified the feasibility of the improved scheme.