In Situ Growth of Copper Channels within CuCl and PVDF Composite for Durable WORM Device Formation

IF 4.3 3区材料科学 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC ACS Applied Electronic Materials Pub Date : 2025-01-15 DOI:10.1021/acsaelm.4c0195210.1021/acsaelm.4c01952

Shilpi Bose, Aloka Sinha and Santanu Ghosh*,

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引用次数: 0

Abstract

This study details the creation of a write-once-read many (WORM) memory device utilizing cuprous chloride (CuCl) and poly(vinylidene fluoride-co-hexafluoropropylene) (PVDF–HFP) polymers. Employing an in-plane configuration, a deliberate 1:10 ratio of CuCl to PVDF–HFP has been selected. This ratio aims to establish an in situ copper channel within the device. The electrical response exhibits consistent memory retention over an extended duration. The WORM characteristics are attributed to the development of multiple conducting filaments or a highly conductive percolative path created by Cu ions within the polymer matrix. The UV–vis study also reinforces the obtained results. Additionally, the WORM undergoes specific poling and cooling conditions. The fabrication approach employed in this research yields a distinctive type of memory device. Once the device is activated, it maintains its state, even after the applied field is reduced. Their applications span legal, financial, healthcare, and archival purposes also, meeting stringent regulatory requirements and enhancing data integrity.

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来源期刊

ACS Applied Electronic Materials Multiple-

CiteScore

7.20

自引率

4.30%

发文量

567

期刊介绍： ACS Applied Electronic Materials is an interdisciplinary journal publishing original research covering all aspects of electronic materials. The journal is devoted to reports of new and original experimental and theoretical research of an applied nature that integrate knowledge in the areas of materials science, engineering, optics, physics, and chemistry into important applications of electronic materials. Sample research topics that span the journal's scope are inorganic, organic, ionic and polymeric materials with properties that include conducting, semiconducting, superconducting, insulating, dielectric, magnetic, optoelectronic, piezoelectric, ferroelectric and thermoelectric. Indexed/Abstracted： Web of Science SCIE Scopus CAS INSPEC Portico