GaN radiofrequency components and power amplifiers for next-generation 5G communications

Abstract

This review article provides a thorough analysis of recent progress in Gallium Nitride radio frequency components and power amplifiers, highlighting their essential contributions to the advancement of fifth-generation communication systems. Over the last two decades, Gallium Nitride High Electron Mobility Transistors have been at the cutting edge of technological development, demonstrating significant advancements and their crucial role in silicon substrate applications for radio frequency power. These advancements underscore the transformative impact and continued importance of Gallium Nitride technologies in enhancing performance and efficiency in modern communication systems. This review evaluates various material structures, device architectures, and fabrication techniques, detailing their impact on enhancing power density and efficiency within 5G systems. Key findings include effective methodologies for mitigating RF leakage from substrates and interfaces, which are vital for sustaining high power density and efficiency. Noteworthy progress in the L-band demonstrates significant improvements in output power and power-added efficiency, highlighting GaN technology's transformative potential in wireless communications. This review integrates critical insights into the current state of GaN RF technology and provides a forward-looking perspective on the challenges and future directions necessary to fully exploit GaN's capabilities for 5G network applications.