The precise characterization of the doping profile is crucial for optimizing the performance and structural integrity of semiconductor devices. As the size of semiconductor devices continues to diminish, the need of precise characterization of doping profiles has become increasingly urgent. Atomic Force Microscopy (AFM) has become a promising technique for doping profile characterization within the semiconductor field, owing to its high spatial resolution, multidimensional feature analysis, and flexibility in various working environments. Based on AFM technology, various techniques have been developed for doping characterization, such as scanning capacitance microscope (SCM), scanning spreading resistance microscope (SSRM) and scanning microwave impedance microscope (sMIM). In this work, we systematically review the application of these three techniques for doping characterization and summarize their strengths and limitations. Furthermore, we also evaluate their capability in characterizing the doping profiles of miniature devices with three-dimensional (3D) architectures. This work offers feasible approaches for advanced semiconductor device manufacturing.
期刊介绍:
Microelectronic Engineering is the premier nanoprocessing, and nanotechnology journal focusing on fabrication of electronic, photonic, bioelectronic, electromechanic and fluidic devices and systems, and their applications in the broad areas of electronics, photonics, energy, life sciences, and environment. It covers also the expanding interdisciplinary field of "more than Moore" and "beyond Moore" integrated nanoelectronics / photonics and micro-/nano-/bio-systems. Through its unique mixture of peer-reviewed articles, reviews, accelerated publications, short and Technical notes, and the latest research news on key developments, Microelectronic Engineering provides comprehensive coverage of this exciting, interdisciplinary and dynamic new field for researchers in academia and professionals in industry.