Modulation of room temperature ferromagnetism in WO3 thin films on low-cost Si wafers

IF 2.4 4区物理与天体物理 Q3 PHYSICS, CONDENSED MATTER Solid State Communications Pub Date : 2025-03-01 Epub Date: 2024-12-19 DOI:10.1016/j.ssc.2024.115807

Nguyen Sy Pham, Nguyen Hoa Hong

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Abstract

Advancements in room temperature ferromagnetic semiconductors boost the possibility of next generation spintronics. It is quite challenging to achieve the room temperature ferromagnetism which is compatible with promising prospect for application of spintronic devices. Room temperature ferromagnetism can be obtained by introducing vacancies into semiconductor oxides. Therefore, synergetic effects between substrate temperature and Ar:O₂ ratio during thin film growth are expected to play important roles in inducing ferromagnetism (FM). Herein, we have investigated the influence of these parameters on room temperature FM of WO₃ thin films on low-cost Si wafers. Based on the results, there are three possible conclusions: (1) the major effect of temperature and Ar:O₂ ratios on structural composition of WO₃ during fabrication process, (2) structural phase of WO₃ has a significant influence on RT-FM, and (3) the crucial role of oxygen vacancies in RT-FM of WO₃. This study may pave the way for understanding the mechanism of room temperature FM in WO₃ thin films and innovating future technological applications.

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低成本硅片上WO3薄膜室温铁磁性的调制

室温铁磁半导体的进步提高了下一代自旋电子学的可能性。自旋电子器件具有良好的应用前景，实现室温铁磁性是一项具有挑战性的工作。在半导体氧化物中引入空位可以获得室温铁磁性。因此，薄膜生长过程中衬底温度和Ar:O2比之间的协同效应有望在诱导铁磁性（FM）中发挥重要作用。本文研究了这些参数对低成本硅片上WO3薄膜室温调频的影响。结果表明：(1)制备过程中温度和Ar:O2比对WO3的结构组成有重要影响；(2)WO3的结构相对RT-FM有显著影响；(3)氧空位在WO3的RT-FM中起关键作用。本研究为进一步了解WO3薄膜室温调频的机理和创新未来的技术应用奠定了基础。

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来源期刊

Solid State Communications 物理-物理：凝聚态物理

CiteScore

3.40

自引率

4.80%

发文量

287

审稿时长

51 days

期刊介绍： Solid State Communications is an international medium for the publication of short communications and original research articles on significant developments in condensed matter science, giving scientists immediate access to important, recently completed work. The journal publishes original experimental and theoretical research on the physical and chemical properties of solids and other condensed systems and also on their preparation. The submission of manuscripts reporting research on the basic physics of materials science and devices, as well as of state-of-the-art microstructures and nanostructures, is encouraged. A coherent quantitative treatment emphasizing new physics is expected rather than a simple accumulation of experimental data. Consistent with these aims, the short communications should be kept concise and short, usually not longer than six printed pages. The number of figures and tables should also be kept to a minimum. Solid State Communications now also welcomes original research articles without length restrictions. The Fast-Track section of Solid State Communications is the venue for very rapid publication of short communications on significant developments in condensed matter science. The goal is to offer the broad condensed matter community quick and immediate access to publish recently completed papers in research areas that are rapidly evolving and in which there are developments with great potential impact.