Fabrication of industrial grade GMR multilayer magnetic sensors for non-recording applications

IF 3.1 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Microelectronic Engineering Pub Date : 2025-06-01 Epub Date: 2025-01-11 DOI:10.1016/j.mee.2024.112311
Bhagaban Behera, Umesh P. Borole, Jakeer Khan, Harish C. Barshilia, P. Chowdhury
{"title":"Fabrication of industrial grade GMR multilayer magnetic sensors for non-recording applications","authors":"Bhagaban Behera,&nbsp;Umesh P. Borole,&nbsp;Jakeer Khan,&nbsp;Harish C. Barshilia,&nbsp;P. Chowdhury","doi":"10.1016/j.mee.2024.112311","DOIUrl":null,"url":null,"abstract":"<div><div>Giant Magnetoresistance (GMR) technology is now becoming a popular choice in the industrial market for non-recording applications (sensor applications). In these applications, the sensor's characteristics need to be engineered for high linearity, reversibility, and high thermal stability. Among two different types of GMR technologies, such as GMR-multilayer (GMR-ML) and GMR- spin valves (GMR-SV), an attempt was made to fabricate a sensing element with high throughput based on GMR-ML due to its cost-effectiveness and relatively higher dynamic field range. Further, sensor was used as linear sensor in both omni-polar (i.e. by default) as well as bipolar (i.e. biased with permanent magnet for converting omfig ni-polar characteristics to bipolar characteristics). A detailed pilot scale fabrication of a GMR sensor with a yield of 88 % on a 4-in. wafer was presented. All the products developed using GMR-ML were evaluated in the real-time applications environment.</div></div>","PeriodicalId":18557,"journal":{"name":"Microelectronic Engineering","volume":"298 ","pages":"Article 112311"},"PeriodicalIF":3.1000,"publicationDate":"2025-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microelectronic Engineering","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0167931724001801","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"2025/1/11 0:00:00","PubModel":"Epub","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

Abstract

Giant Magnetoresistance (GMR) technology is now becoming a popular choice in the industrial market for non-recording applications (sensor applications). In these applications, the sensor's characteristics need to be engineered for high linearity, reversibility, and high thermal stability. Among two different types of GMR technologies, such as GMR-multilayer (GMR-ML) and GMR- spin valves (GMR-SV), an attempt was made to fabricate a sensing element with high throughput based on GMR-ML due to its cost-effectiveness and relatively higher dynamic field range. Further, sensor was used as linear sensor in both omni-polar (i.e. by default) as well as bipolar (i.e. biased with permanent magnet for converting omfig ni-polar characteristics to bipolar characteristics). A detailed pilot scale fabrication of a GMR sensor with a yield of 88 % on a 4-in. wafer was presented. All the products developed using GMR-ML were evaluated in the real-time applications environment.

Abstract Image

查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
用于非记录应用的工业级GMR多层磁传感器的制造
巨磁电阻(GMR)技术现在已成为工业市场中非记录应用(传感器应用)的热门选择。在这些应用中,传感器的特性需要设计成高线性、可逆性和高热稳定性。在GMR-多层(GMR- ml)和GMR-自旋阀(GMR- sv)两种不同类型的GMR技术中,由于GMR- ml具有成本效益和相对较高的动态场范围,因此尝试基于GMR- ml制造高通量的传感元件。此外,传感器在全极性(即默认)和双极性(即偏置永磁体用于将omfig ni-polar特性转换为bipolar特性)中用作线性传感器。详细的中试规模制造的GMR传感器与收率88%的4-in。晶圆饼呈上。所有使用GMR-ML开发的产品都在实时应用环境中进行了评估。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
Microelectronic Engineering
Microelectronic Engineering 工程技术-工程:电子与电气
CiteScore
5.30
自引率
4.30%
发文量
131
审稿时长
29 days
期刊介绍: Microelectronic Engineering is the premier nanoprocessing, and nanotechnology journal focusing on fabrication of electronic, photonic, bioelectronic, electromechanic and fluidic devices and systems, and their applications in the broad areas of electronics, photonics, energy, life sciences, and environment. It covers also the expanding interdisciplinary field of "more than Moore" and "beyond Moore" integrated nanoelectronics / photonics and micro-/nano-/bio-systems. Through its unique mixture of peer-reviewed articles, reviews, accelerated publications, short and Technical notes, and the latest research news on key developments, Microelectronic Engineering provides comprehensive coverage of this exciting, interdisciplinary and dynamic new field for researchers in academia and professionals in industry.
期刊最新文献
Tailoring Ga2O3 for solar-blind UV photodetectors: A comprehensive review of materials, techniques, and applications Soft detrap scheme for suppressing read-after-write-delay in 3D ferroelectric NAND arrays Multi-threshold reservoir computing system for high-efficiency temporal signal processing Reconfigurable ferroelectric GAAFET architectures for advanced logic circuits Modelling the ON-state gate leakage current in p-GaN gated AlGaN/GaN HEMTs
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1