Evaluating neon ions as an alternative to gallium in micro cantilevers fracture testing

Abstract

The influence of neon ions at the notch front as well as of annealing heat treatments on the fracture toughness of single crystalline silicon was investigated via microcantilever fracture testing. Using in situ scanning electron microscope deformation, the fracture toughness of the neon-notched cantilevers after annealing was measured, resulting in an average value of 1.0 MPa m^0.5, proving that chemically inert gas ions can result in similar fracture toughness values as with Ga FIBs. However, Ne bubble formation was identified as substantial source of errors and we advise caution when interpreting fracture toughness measurements when using Ne as chemically inert ion species for notching.