An unusual approach significantly improving the magnetostrain performance of Ni-Mn-Ga composite materials

IF 5.6 2区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY Scripta Materialia Pub Date : 2025-05-01 Epub Date: 2025-02-28 DOI:10.1016/j.scriptamat.2025.116624
DongKeun Han , Wan-Ting Chiu , Masaki Tahara , Naoki Nohira , Volodymyr Chernenko , Senentxu Lanceros-Mendez , Hideki Hosoda
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Abstract

The magnetization and magnetostrain behaviors of “Cu/Ni-Mn-Ga single crystalline particles/Cu” laminate composite have been studied depending on the substitution of Cu foils with soft magnetic high-permeability Fe foils. It was found that this replacement caused both a significant reduction in the threshold magnetic field for martensitic variant reorientation and a sudden change in the "magnetostrain versus magnetic field" dependence. Quantitative analysis confirmed that these unusual effects in the particle layer were due to additional tensile stress generated by the magnetically induced repulsive force between the two Fe foils. The incorporation of soft magnetic materials with high permeability into ferromagnetic shape memory alloys (FSMA) composites offers an effective way to significantly improve their magnetostrain performance.

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一种不同寻常的方法显著提高了Ni-Mn-Ga复合材料的磁应变性能
研究了以软磁高导磁铁箔代替铜箔的“Cu/Ni-Mn-Ga单晶颗粒/Cu”层状复合材料的磁化和磁应变行为。研究发现,这种替换不仅使马氏体变异体重定向的阈值磁场显著降低,而且使“磁应变-磁场”依赖性突然改变。定量分析证实,颗粒层中这些不寻常的效应是由于两个铁箔之间的磁感应排斥力产生的额外拉伸应力所致。在铁磁形状记忆合金(FSMA)复合材料中掺入高磁导率的软磁材料,是显著提高其磁应变性能的有效途径。
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来源期刊
Scripta Materialia
Scripta Materialia 工程技术-材料科学:综合
CiteScore
11.40
自引率
5.00%
发文量
581
审稿时长
34 days
期刊介绍: Scripta Materialia is a LETTERS journal of Acta Materialia, providing a forum for the rapid publication of short communications on the relationship between the structure and the properties of inorganic materials. The emphasis is on originality rather than incremental research. Short reports on the development of materials with novel or substantially improved properties are also welcomed. Emphasis is on either the functional or mechanical behavior of metals, ceramics and semiconductors at all length scales.
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