Effect of Si addition on polarity inversion in scandium aluminum nitride piezoelectric thin films

IF 5.6 2区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY Scripta Materialia Pub Date : 2025-03-15 Epub Date: 2024-12-27 DOI:10.1016/j.scriptamat.2024.116523

Sri Ayu Anggraini, Masato Uehara, Kenji Hirata, Taisei Motomura, Hiroshi Yamada, Morito Akiyama

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Abstract

Scandium aluminum nitride (Sc_xAl_1-xN) has been championed as the future material and controlling its polarity is anticipated to bring improvement to the performance of broad range electronic devices, including radio frequency (RF) filter. In this study, the polarity of Sc_xAl_1-xN thin films fabricated via sputtering was successfully inversed from metal (M)-polar to nitrogen (N)-polar by addition of silicon (Si) in the range of 2.5–20.0 at.%. Addition of approximately 10 at % Si into Sc_xAl_1-xN brought the optimum piezoelectric coefficient d₃₃, particularly for x = 0.1 and 0.2 where the resulted d₃₃ was found to be similar with that without Si addition. However, addition of Si could not inverse the polarity of Sc_0.4Al_0.6N, suggesting that the concentration of both Si and scandium (Sc) governed the resulting polarity. Effect of Si addition into ScAlN on changes in polarity, crystal structure as well as plausible mechanism were further discussed herein.

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Si加入对氮化钪铝压电薄膜极性反转的影响

氮化钪铝（ScxAl1-xN）被认为是未来的材料，控制其极性有望改善包括射频（RF）滤波器在内的广泛电子设备的性能。在本研究中，通过溅射法制备的ScxAl1-xN薄膜，通过添加2.5-20.0 at.%的硅（Si），成功地从金属(M)极性转变为氮(N)极性。在ScxAl1-xN中添加约10 % Si可获得最佳的压电系数d33，特别是当x = 0.1和0.2时，其结果d33与未添加Si时相似。然而，Si的加入并不能逆转Sc0.4Al0.6N的极性，这表明Si和钪（Sc）的浓度共同控制了极性。进一步讨论了硅加入到ScAlN中对极性、晶体结构变化的影响以及可能的机理。

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来源期刊

Scripta Materialia 工程技术-材料科学：综合

CiteScore

11.40

自引率

5.00%

发文量

581

审稿时长

34 days

期刊介绍： Scripta Materialia is a LETTERS journal of Acta Materialia, providing a forum for the rapid publication of short communications on the relationship between the structure and the properties of inorganic materials. The emphasis is on originality rather than incremental research. Short reports on the development of materials with novel or substantially improved properties are also welcomed. Emphasis is on either the functional or mechanical behavior of metals, ceramics and semiconductors at all length scales.