Effect of Si addition on polarity inversion in scandium aluminum nitride piezoelectric thin films

IF 5.3 2区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY Scripta Materialia Pub Date : 2024-12-27 DOI:10.1016/j.scriptamat.2024.116523

Sri Ayu Anggraini, Masato Uehara, Kenji Hirata, Taisei Motomura, Hiroshi Yamada, Morito Akiyama

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Abstract

Scandium aluminum nitride (Sc_xAl_1-xN) has been championed as the future material and controlling its polarity is anticipated to bring improvement to the performance of broad range electronic devices, including radio frequency (RF) filter. In this study, the polarity of Sc_xAl_1-xN thin films fabricated via sputtering was successfully inversed from metal (M)-polar to nitrogen (N)-polar by addition of silicon (Si) in the range of 2.5–20.0 at.%. Addition of approximately 10 at % Si into Sc_xAl_1-xN brought the optimum piezoelectric coefficient d₃₃, particularly for x = 0.1 and 0.2 where the resulted d₃₃ was found to be similar with that without Si addition. However, addition of Si could not inverse the polarity of Sc_0.4Al_0.6N, suggesting that the concentration of both Si and scandium (Sc) governed the resulting polarity. Effect of Si addition into ScAlN on changes in polarity, crystal structure as well as plausible mechanism were further discussed herein.

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来源期刊

Scripta Materialia 工程技术-材料科学：综合

CiteScore

11.40

自引率

5.00%

发文量

581

审稿时长

34 days

期刊介绍： Scripta Materialia is a LETTERS journal of Acta Materialia, providing a forum for the rapid publication of short communications on the relationship between the structure and the properties of inorganic materials. The emphasis is on originality rather than incremental research. Short reports on the development of materials with novel or substantially improved properties are also welcomed. Emphasis is on either the functional or mechanical behavior of metals, ceramics and semiconductors at all length scales.