Eui Joong Shin, Jaejoong Jeong, Gyusoup Lee, Seongho Kim, Byung Jin Cho
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引用次数: 0
Abstract
Recently, a dual-mechanism Flash memory cell that utilizes both charge trapping and polarization switching as the memory mechanism was proposed [1]. In this work, the data retention characteristics of the dual-mechanism memory are extensively studied. Lifetime and activation energy analyses show that the remanent polarization in the blocking layer of the dual-mechanism memory suppresses the de-trapping of electrons in the charge trap layer. A quantitative analysis of the trapped charge and remanent polarization revealed that the electrons can be stored in a potential well created by the remanent polarization, which effectively improves the retention characteristics.
期刊介绍：
It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.
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