Magnetic properties and I-V characteristics of DC magnetron sputtered [Co (0.2 nm)/Ni (0.4 nm)]10 thin films

Abstract

A set of [Co(0.2 nm)/Ni(0.4 nm)]₁₀ multilayers (MLs) thin films were fabricated on silicon and glass substrate under various distinct conditions (i) as-prepared films without an under-layer, (ii) films with a copper [Cu(2 nm)] underlayer (UL), (iii) films with an in situ annealed Ta/Cu UL during sputtering, and (iv) films with post-annealing treatment, by using a DC magnetron sputtering machine. The [Co/Ni] MLs thin films prepared under various conditions exhibit in-plane magnetic anisotropic behavior except as-prepared films which show isotropic behavior. The maximum saturation magnetization was observed in the as-prepared films prepared on both silicon and glass substrate. The Ta/Cu UL in situ annealing followed by post-annealing films exhibit highest coercivity, moderate saturation magnetization but lowest squareness in contrast to the films deposited under other conditions. The I-V curves of the films show diode like behavior with breakdown voltage of 42, 58, 14, and 21 V for [Co/Ni] MLs under four different conditions.