Molecular beam epitaxial In2Te3 electronic devices

Abstract

We report on the electrical characteristics of field-effect transistors (FETs) and Schottky diodes based on In2Te3 grown on hexagonal boron nitride (h-BN) substrates utilizing molecular beam epitaxy (MBE). A two-step growth method was used to increase surface coverage and large grain sizes for high-quality In2Te3. Scanning transmission electron microscopy (STEM) imaging revealed an atomically clean and abrupt interface between the In2Te3 and h-BN substrates. Compared with the previously reported In2Te3 FETs, the MBE-grown In2Te3 FETs exhibited superior electrical properties, including a mobility of 6.07 cm2 V−1 s−1, a subthreshold swing close to 6 V dec−1, and an impressive on/off ratio of approximately 105. Furthermore, the Ti/In2Te3 Schottky diodes exhibit a low saturation current of 0.4 nA, an ideality factor of 26.7, and a Schottky barrier height of 0.68 eV. We report on the fabrication and electrical characteristics of In2Te3 thin films grown on h-BN using molecular beam epitaxy(MBE). Cross-sectional scanning transmission electron microscopy images showed an atomically clean and abrupt interface between In2Te3 and h-BN substrates. The MBE-grown In2Te3 electronic devices exhibited superior electrical properties compared to previously reported In2Te3 field effect transistors(FETs) and In2Te3-based Schottky diodes.