Xinpei Duan , Yahui Qing , Yong Wang , Ruohao Hong , Jiawei Chen , Pei Yang , Yanan Yin , Xinjie Zhou , Xingqiang Liu , Bei Jiang
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引用次数: 0
Abstract
Resistive random-access memory (RRAM) demonstrates excellent radiation tolerance characteristics, making it highly suitable for a wide range of applications in harsh radiation environments such as aerospace. This work specifically investigates the impact of total ionizing dose (TID) radiation on the electrical performance of HfO2/TaOx-based RRAM. Through an analysis of the electrical characteristics before and after irradiation, we thoroughly examine the evolution of performance and the mechanism of radiation damage in two types of HfO2/TaOx-based RRAMs under high-energy gamma rays. The findings from this study will serve as a valuable reference for the development and radiation hardening of HfO2/TaOx-based RRAMs designed to operate effectively in harsh radiation environments.
期刊介绍：
Microelectronics Reliability, is dedicated to disseminating the latest research results and related information on the reliability of microelectronic devices, circuits and systems, from materials, process and manufacturing, to design, testing and operation. The coverage of the journal includes the following topics: measurement, understanding and analysis; evaluation and prediction; modelling and simulation; methodologies and mitigation. Papers which combine reliability with other important areas of microelectronics engineering, such as design, fabrication, integration, testing, and field operation will also be welcome, and practical papers reporting case studies in the field and specific application domains are particularly encouraged.
Most accepted papers will be published as Research Papers, describing significant advances and completed work. Papers reviewing important developing topics of general interest may be accepted for publication as Review Papers. Urgent communications of a more preliminary nature and short reports on completed practical work of current interest may be considered for publication as Research Notes. All contributions are subject to peer review by leading experts in the field.
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