{"title":"Anisotropic growth mechanism of epitaxial graphene on 4H-SiC","authors":"Jiadong Chen, Cunzhi Sun, Dingqu Lin, Xiaping Chen, Yuning Zhang, Feng Zhang, Deyi Fu, Rong Zhang","doi":"10.1016/j.apsusc.2025.162596","DOIUrl":null,"url":null,"abstract":"<div><div>The growth process of SiC epitaxial graphene at low pressure has been investigated systematically. Transition from buffer layer to full monolayer graphene undergoes several stages including graphene nanoribbon nucleation, directional growth and full merging. The morphologies and structures of the graphene at different stages are characterized by scanning electron microscopy, atomic force microscopy and Raman spectroscopy. The anisotropic growth mechanism of epitaxial graphene has been revealed by statistical analysis of the shapes and sizes of graphene nanoribbons (width ranges from 40 to 300 nm with a maximum length <em>L</em><sub>⊥</sub> of ∼ 1.08 μm). It is found that silicon sublimation rate plays a critical role in determining the anisotropic growth of nanoribbons, which is further confirmed by the evolution of the characterized sizes of nanoribbons at different growth stages.</div></div>","PeriodicalId":247,"journal":{"name":"Applied Surface Science","volume":"690 ","pages":"Article 162596"},"PeriodicalIF":6.6000,"publicationDate":"2025-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Applied Surface Science","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0169433225003101","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"2025/2/8 0:00:00","PubModel":"Epub","JCR":"Q2","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}
引用次数: 0
Abstract
The growth process of SiC epitaxial graphene at low pressure has been investigated systematically. Transition from buffer layer to full monolayer graphene undergoes several stages including graphene nanoribbon nucleation, directional growth and full merging. The morphologies and structures of the graphene at different stages are characterized by scanning electron microscopy, atomic force microscopy and Raman spectroscopy. The anisotropic growth mechanism of epitaxial graphene has been revealed by statistical analysis of the shapes and sizes of graphene nanoribbons (width ranges from 40 to 300 nm with a maximum length L⊥ of ∼ 1.08 μm). It is found that silicon sublimation rate plays a critical role in determining the anisotropic growth of nanoribbons, which is further confirmed by the evolution of the characterized sizes of nanoribbons at different growth stages.
期刊介绍：
Applied Surface Science covers topics contributing to a better understanding of surfaces, interfaces, nanostructures and their applications. The journal is concerned with scientific research on the atomic and molecular level of material properties determined with specific surface analytical techniques and/or computational methods, as well as the processing of such structures.
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