MOF-derived MoS2/nitrogen-doped graphene aerogel for supercapacitor electrodes

IF 5.1 3区 材料科学 Q2 MATERIALS SCIENCE, COATINGS & FILMS Diamond and Related Materials Pub Date : 2025-03-01 Epub Date: 2025-02-10 DOI:10.1016/j.diamond.2025.112098
Zehui Tang, Yun Lei, Yifan Deng, Jiong Chen, Kaiwei Liu, Cuiru Zhang, Tianqi Wang, Yaonan Lei
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Abstract

MOFs-derived MoS2 with 1T/2H mixed phase was synthesized by a simple one-step hydrothermal method, and MOFs-derived MoS2/N-GA were formed by assembling them with nitrogen-doped graphene aerogel (N-GA). The morphology, structure and chemical composition of MOFs-derived MoS2/N-GA were characterized by XRD, SEM, TEM, Raman, XPS and FTIR. In addition, the capacitive behavior, energy storage property, and charge transfer capability of the composites were analyzed using electrochemical tests (cyclic scanning voltammetry, constant current charge/discharge, and electrochemical impedance). The results showed that the use of N-GA as the carrier of MOFs-derived MoS2 not only enhanced the electrical conductivity of the composites, but also reduced the volume expansion and contraction of MoS2 in the process of charging and discharging due to its unique three-dimensional structure. As the doping amount of N-GA changed from 10 % to 30 %, the capacitive performance of MNGA20 (20 % N-GA) was superior to that of MNGA10 (10 % N-GA) and MNGA30 (30 % N-GA) at scanning rates from 5 to 100 mV/s. MNGA20 composites exhibited the smallest charge transfer resistance and optimal specific capacitance of 530 F/g at 1 A/g, and retained 80.2 % capacitance after 1000 charge-discharge cycles at 10 A/g. These results provided valuable insights for developing high-performance electrode materials, highlighting the promising application of MOFs-derived MoS2/N-GA in supercapacitor devices.

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mof衍生的MoS2/氮掺杂石墨烯气凝胶用于超级电容器电极
采用简单的一步水热法合成了具有1T/2H混合相的mofs衍生MoS2,并将其与氮掺杂石墨烯气凝胶(N-GA)组装形成mofs衍生MoS2/N-GA。采用XRD、SEM、TEM、Raman、XPS和FTIR等手段对mofs衍生的MoS2/N-GA的形貌、结构和化学成分进行了表征。通过循环扫描伏安法、恒流充放电法和电化学阻抗法等电化学测试,分析了复合材料的电容性能、储能性能和电荷传递能力。结果表明,使用N-GA作为mofs衍生MoS2的载体,不仅提高了复合材料的导电性,而且由于其独特的三维结构,减少了MoS2在充放电过程中的体积膨胀和收缩。当N-GA掺杂量从10%增加到30%时,MNGA20 (20% N-GA)在扫描速率5 ~ 100 mV/s范围内的电容性能优于MNGA10 (10% N-GA)和MNGA30 (30% N-GA)。MNGA20复合材料在1 A/g条件下具有最小的电荷转移电阻和530 F/g的最佳比电容,在10 A/g条件下充放电1000次后仍保持80.2%的电容。这些结果为开发高性能电极材料提供了有价值的见解,突出了mofs衍生的MoS2/N-GA在超级电容器器件中的应用前景。
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来源期刊
Diamond and Related Materials
Diamond and Related Materials 工程技术-材料科学:综合
CiteScore
6.00
自引率
14.60%
发文量
702
审稿时长
2.1 months
期刊介绍: DRM is a leading international journal that publishes new fundamental and applied research on all forms of diamond, the integration of diamond with other advanced materials and development of technologies exploiting diamond. The synthesis, characterization and processing of single crystal diamond, polycrystalline films, nanodiamond powders and heterostructures with other advanced materials are encouraged topics for technical and review articles. In addition to diamond, the journal publishes manuscripts on the synthesis, characterization and application of other related materials including diamond-like carbons, carbon nanotubes, graphene, and boron and carbon nitrides. Articles are sought on the chemical functionalization of diamond and related materials as well as their use in electrochemistry, energy storage and conversion, chemical and biological sensing, imaging, thermal management, photonic and quantum applications, electron emission and electronic devices. The International Conference on Diamond and Carbon Materials has evolved into the largest and most well attended forum in the field of diamond, providing a forum to showcase the latest results in the science and technology of diamond and other carbon materials such as carbon nanotubes, graphene, and diamond-like carbon. Run annually in association with Diamond and Related Materials the conference provides junior and established researchers the opportunity to exchange the latest results ranging from fundamental physical and chemical concepts to applied research focusing on the next generation carbon-based devices.
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