Stacking-dependent tunable valley splitting in Janus SMoSiN2-based van der Waals heterostructure

IF 3.6 2区 物理与天体物理 Q2 PHYSICS, APPLIED Applied Physics Letters Pub Date : 2025-02-12 DOI:10.1063/5.0250449
Hui Zeng, Weijie Zhang, Chengyu Qiu, Jun Zhao, Dazhi Ding
{"title":"Stacking-dependent tunable valley splitting in Janus SMoSiN2-based van der Waals heterostructure","authors":"Hui Zeng, Weijie Zhang, Chengyu Qiu, Jun Zhao, Dazhi Ding","doi":"10.1063/5.0250449","DOIUrl":null,"url":null,"abstract":"Using the first principles calculation, we explore the modulation of valley-related properties of two-dimensional (2D) Janus SMoSiN2 monolayer by constructing van der Waals (vdW) heterostructure with the ferromagnet CrCl3 monolayer. The monolayered SMoSiN2 possesses excellent stability and direct bandgap at the K/K′ valley, making it a promising candidate for valleytronic semiconductor. The ferromagnet CrCl3 substrate induces a sizable valley splitting via proximity coupling. The valley-contrasting property of the top-stacking is significantly tunable by both in-plane sliding and vertical strain engineering, leading to extraordinary tunability of valley splitting in the range 1.6–9.4 meV. In contrast, the valley-contrasting property of the bottom-stacking is comparably robust due to the screen effect originating from the outmost N sublayer to reduce the proximity interaction. Our investigation reveals that the stacking order is a degree of freedom to manipulate the valley-related properties of various vdW heterostructures, facilitating the achievement of versatile valley-contrasting properties.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"6 1","pages":""},"PeriodicalIF":3.6000,"publicationDate":"2025-02-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Applied Physics Letters","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1063/5.0250449","RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, APPLIED","Score":null,"Total":0}
引用次数: 0

Abstract

Using the first principles calculation, we explore the modulation of valley-related properties of two-dimensional (2D) Janus SMoSiN2 monolayer by constructing van der Waals (vdW) heterostructure with the ferromagnet CrCl3 monolayer. The monolayered SMoSiN2 possesses excellent stability and direct bandgap at the K/K′ valley, making it a promising candidate for valleytronic semiconductor. The ferromagnet CrCl3 substrate induces a sizable valley splitting via proximity coupling. The valley-contrasting property of the top-stacking is significantly tunable by both in-plane sliding and vertical strain engineering, leading to extraordinary tunability of valley splitting in the range 1.6–9.4 meV. In contrast, the valley-contrasting property of the bottom-stacking is comparably robust due to the screen effect originating from the outmost N sublayer to reduce the proximity interaction. Our investigation reveals that the stacking order is a degree of freedom to manipulate the valley-related properties of various vdW heterostructures, facilitating the achievement of versatile valley-contrasting properties.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
基于Janus smosin2的范德华异质结构中堆叠依赖的可调谐谷分裂
利用第一性原理计算,我们利用铁磁体CrCl3单层构建van der Waals (vdW)异质结构,探索了二维(2D) Janus SMoSiN2单层的谷相关性质调制。单层SMoSiN2具有优异的稳定性和K/K谷的直接带隙,是谷电子半导体的理想候选材料。铁磁体CrCl3衬底通过近距离耦合诱导了相当大的谷分裂。通过平面内滑动和垂直应变工程可以显著调节顶叠加的谷对比特性,从而在1.6-9.4 meV范围内实现谷分裂的可调性。相比之下,由于最外层N子层产生的屏蔽效应减少了邻近相互作用,底部堆叠的谷对比特性相对较强。我们的研究表明,堆叠顺序是操纵各种vdW异质结构的谷相关特性的自由度,有助于实现多种谷对比特性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
Applied Physics Letters
Applied Physics Letters 物理-物理:应用
CiteScore
6.40
自引率
10.00%
发文量
1821
审稿时长
1.6 months
期刊介绍: Applied Physics Letters (APL) features concise, up-to-date reports on significant new findings in applied physics. Emphasizing rapid dissemination of key data and new physical insights, APL offers prompt publication of new experimental and theoretical papers reporting applications of physics phenomena to all branches of science, engineering, and modern technology. In addition to regular articles, the journal also publishes invited Fast Track, Perspectives, and in-depth Editorials which report on cutting-edge areas in applied physics. APL Perspectives are forward-looking invited letters which highlight recent developments or discoveries. Emphasis is placed on very recent developments, potentially disruptive technologies, open questions and possible solutions. They also include a mini-roadmap detailing where the community should direct efforts in order for the phenomena to be viable for application and the challenges associated with meeting that performance threshold. Perspectives are characterized by personal viewpoints and opinions of recognized experts in the field. Fast Track articles are invited original research articles that report results that are particularly novel and important or provide a significant advancement in an emerging field. Because of the urgency and scientific importance of the work, the peer review process is accelerated. If, during the review process, it becomes apparent that the paper does not meet the Fast Track criterion, it is returned to a normal track.
期刊最新文献
Ultralow threshold polariton laser and vortex formation in an organic microcavity at room temperature Surface nanoprocessing with unfocused beams of high-energy femtosecond lasers: A tool to produce surface characteristics libraries Acoustically coupled MEMS transducer pairs with loss and gain Magnetic aftereffect and Barkhausen jumps in thin altermagnetic Mn5Si3 films Electrical control of polarization-resolved photodetection in GeSe/MoTe2 heterostructures for optoelectronic encryption
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1