Optical Memory in a MoSe2/Clinochlore Device

IF 8.2 2区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY ACS Applied Materials & Interfaces Pub Date : 2025-02-13 DOI:10.1021/acsami.4c19337
Alessandra Ames, Frederico B. Sousa, Gabriel A. D. Souza, Raphaela de Oliveira, Igor R. F. Silva, Gabriel L. Rodrigues, Kenji Watanabe, Takashi Taniguchi, Gilmar E. Marques, Ingrid D. Barcelos, Alisson R. Cadore, Victor Lopez-Richard, Marcio D. Teodoro
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Abstract

Two-dimensional heterostructures have been crucial in advancing optoelectronic devices utilizing van der Waals materials. Semiconducting transition-metal dichalcogenide monolayers, known for their unique optical properties, offer extensive possibilities for light-emitting devices. Recently, a memory-driven optical device, termed a Mem-emitter, was proposed by using these monolayers atop dielectric substrates. The successful realization of such devices heavily depends on the selection of the optimal substrate. Here, we report a pronounced memory effect in a MoSe2/clinochlore device, evidenced by an electric hysteresis in the intensity and energy of MoSe2 monolayer emissions. This demonstrates both population- and transition-rate-driven Mem-emitter abilities. Our theoretical approach correlates these memory effects with internal state variables of the substrate, emphasizing that a clinochlore-layered structure is crucial for a robust and rich memory response. This work introduces a novel two-dimensional device with promising applications in memory functionalities, highlighting the importance of alternate insulators in the fabrication of van der Waals heterostructures.

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MoSe2/Clinochlore器件中的光存储器
二维异质结构在利用范德华材料推进光电器件的过程中起着至关重要的作用。半导体过渡金属双硫化物单层,以其独特的光学特性而闻名,为发光器件提供了广泛的可能性。最近,一种存储器驱动的光学器件,称为memm发射极,被提出使用这些单层在介电基底上。这种器件的成功实现在很大程度上取决于最佳衬底的选择。在这里,我们报告了MoSe2/clinochlore器件中明显的记忆效应,证明了MoSe2单层发射强度和能量的电滞后。这证明了人口和过渡率驱动的电磁发射器能力。我们的理论方法将这些记忆效应与衬底的内部状态变量联系起来,强调氯氯层状结构对于稳健和丰富的记忆响应至关重要。这项工作介绍了一种新的二维器件,在存储功能方面具有很好的应用前景,强调了交替绝缘体在范德华异质结构制造中的重要性。
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来源期刊
ACS Applied Materials & Interfaces
ACS Applied Materials & Interfaces 工程技术-材料科学:综合
CiteScore
16.00
自引率
6.30%
发文量
4978
审稿时长
1.8 months
期刊介绍: ACS Applied Materials & Interfaces is a leading interdisciplinary journal that brings together chemists, engineers, physicists, and biologists to explore the development and utilization of newly-discovered materials and interfacial processes for specific applications. Our journal has experienced remarkable growth since its establishment in 2009, both in terms of the number of articles published and the impact of the research showcased. We are proud to foster a truly global community, with the majority of published articles originating from outside the United States, reflecting the rapid growth of applied research worldwide.
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