Wei Ma, Yaomu Hu, Shu Ran, Jianzhuang Yang, Zhihui Wei
{"title":"Aluminum nitride-enhanced spherical-like Fe3O4 nanoparticles decorating reduced graphene oxide hybrid composites with superior microwave absorption performance","authors":"Wei Ma, Yaomu Hu, Shu Ran, Jianzhuang Yang, Zhihui Wei","doi":"10.1007/s10854-025-14397-8","DOIUrl":null,"url":null,"abstract":"<div><p>With the quick development of up-to-date social informatization, a harm of ubiquitous microwave absorption (MA) has become a significant issue to environment, communication industry, and human health. It is still a challenge to design high-performance absorbing materials to eliminate the harm of MA. In this work, the reduced oxide graphene (rGO) sheets decorated by aluminum nitride (AlN) and spherical-like structures of Fe<sub>3</sub>O<sub>4</sub> nanoparticles were successfully fabricated via a one-pot solvothermal method. The rGO/Fe<sub>3</sub>O<sub>4</sub>/AlN hybrid composites as microwave absorbers exhibited superior MA performance by tuning the content ratio of Fe<sub>3</sub>O<sub>4</sub> to AlN and the mass ratio of rGO/Fe<sub>3</sub>O<sub>4</sub>/AlN to paraffin was 3:7. Significantly, the minimum reflection loss (RL<sub>min</sub>) value of rGO/Fe<sub>3</sub>O<sub>4</sub>/AlN-paraffin was − 59.39 dB at 14.24 GHz with a thickness of only 1.8 mm and the effective absorption bandwidth was 5.68 GHz (12.32–18 GHz) when the content ratio of Fe<sub>3</sub>O<sub>4</sub> to AlN was 1:1.5. The introduction of proper content of AlN could enable excellent MA performance of hybrid composites due to the enhancement of the impedance matching and synergistic effect. Therefore, our present work may build up a new strategy for developing prospect MA materials with practical applications by facile preparation routes and low production cost control.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 5","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2025-02-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-025-14397-8","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
With the quick development of up-to-date social informatization, a harm of ubiquitous microwave absorption (MA) has become a significant issue to environment, communication industry, and human health. It is still a challenge to design high-performance absorbing materials to eliminate the harm of MA. In this work, the reduced oxide graphene (rGO) sheets decorated by aluminum nitride (AlN) and spherical-like structures of Fe3O4 nanoparticles were successfully fabricated via a one-pot solvothermal method. The rGO/Fe3O4/AlN hybrid composites as microwave absorbers exhibited superior MA performance by tuning the content ratio of Fe3O4 to AlN and the mass ratio of rGO/Fe3O4/AlN to paraffin was 3:7. Significantly, the minimum reflection loss (RLmin) value of rGO/Fe3O4/AlN-paraffin was − 59.39 dB at 14.24 GHz with a thickness of only 1.8 mm and the effective absorption bandwidth was 5.68 GHz (12.32–18 GHz) when the content ratio of Fe3O4 to AlN was 1:1.5. The introduction of proper content of AlN could enable excellent MA performance of hybrid composites due to the enhancement of the impedance matching and synergistic effect. Therefore, our present work may build up a new strategy for developing prospect MA materials with practical applications by facile preparation routes and low production cost control.
期刊介绍:
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.