Enhancing surface quality of p-type silicon wafers by ozone-assisted two-step texturization

Abstract

The ozone treatment is proposed as a simple and versatile process that can be utilized across various fabrication stages to enhance the performance of silicon solar cells. The effectiveness of this treatment on p-type silicon surfaces was examined through the application of ozone dissolved in deionized water (DIO₃) and the ultraviolet-ozone (UVO₃) cleaning process prior to the two-step texturization procedure. It was found that the surface with the DIO₃ treatment for 10-min results in a tremendous surface quality on p-type silicon wafer. According to field emission scanning electron microscope (FESEM) micrographs and UV–Visible spectrometer (UV–Vis) measurements, the textured wafer with DIO₃ treatment improves the surface morphology and decreases the front surface reflection. Consequently, the DIO₃ treatments were determined to be optimal, yielding a reflectivity value of less than 12%. The range size and height of the pyramid formed were 1.9–2.0 µm and 0.8–1.5 µm, respectively. Results from the Atomic Force Microscope (AFM) also confirm the increase in average surface roughness from 203 to 300 nm was expected to improve the light absorption. Moreover, this methodology leads to a considerable reduction in surface damage and is applicable to the silicon texturization process utilized in solar cell manufacturing.