Delving into the design of low – dimensional scandium nitride single and – multilayers, and single and – multiwalled zigzag nanotubes

IF 4.6 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Materials Science in Semiconductor Processing Pub Date : 2025-02-18 DOI:10.1016/j.mssp.2025.109383
A. Majouri , T. Larbi , A. Ben Daly , K. Doll , M. Amlouk
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Abstract

Herein, we exploit quantum-mechanical simulations based on the density functional theory (DFT) to the study of lattice dynamics and structural stability of scandium nitride ScN from the 3D bulk, the square 2D mono and multi-layers to the corresponding single and multi-walled zigzag nanotubes. An effective variety of energetic and geometric parameters as well as electronic and vibrational contributions to the polarizability are established. For all forms, dynamic stability is analyzed via vibrational studies through the simulation of their IR and Raman spectra by using a coupled perturbed Kohn-Sham and Hartree-Fock (CPKS/HF) computational approach. The mechanical response is further achieved by computing their elastic constants that satisfy the mechanical stability criterion. Upon building the 2D square multilayers, a noticeable IR and Raman active modes are generated with the interlayer distance that breaks inversion symmetry and alters the lattice dynamics. By increasing the number of layers, Eu modes become softer and shift toward lower wavelengths while A2u modes harden with a red shift owing to mechanical deformations that occur between layers. The vibrational active modes of (n,0) ScN square single walled nanotubes are found to be connected with those of the square monolayer as the 1D → 2D transition is approached. The dynamical and structural stability of all forms suggest interesting possibilities for engineering the physical properties of scandium nitride and impact the fabrication of new potential optoelectronic devices.

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探讨了低维氮化钪单层和多层、单层和多壁之字形纳米管的设计
本文利用基于密度泛函理论(DFT)的量子力学模拟,研究了氮化钪ScN从三维体、二维方形单层和多层到相应的单壁和多壁之字形纳米管的晶格动力学和结构稳定性。建立了各种有效的能量和几何参数以及电子和振动对极化率的贡献。对于所有形式,动态稳定性通过振动研究进行分析,通过使用耦合的Kohn-Sham和Hartree-Fock (CPKS/HF)计算方法模拟它们的IR和Raman光谱。通过计算满足力学稳定性判据的弹性常数,进一步得到其力学响应。在构建二维方形多层后,随着层间距离的增加,产生了明显的红外和拉曼主动模式,这打破了反演对称性并改变了晶格动力学。通过增加层数,Eu模式变得更软并向较低波长移动,而A2u模式由于层之间发生的机械变形而变硬并发生红移。在一维→二维跃迁过程中,发现(n,0) ScN方形单壁纳米管的振动活性模式与方形单层纳米管的振动活性模式相连接。所有形式的动态和结构稳定性为氮化钪的工程物理性质和影响新的潜在光电器件的制造提供了有趣的可能性。
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来源期刊
Materials Science in Semiconductor Processing
Materials Science in Semiconductor Processing 工程技术-材料科学:综合
CiteScore
8.00
自引率
4.90%
发文量
780
审稿时长
42 days
期刊介绍: Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.
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