A. Majouri , T. Larbi , A. Ben Daly , K. Doll , M. Amlouk
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引用次数: 0
Abstract
Herein, we exploit quantum-mechanical simulations based on the density functional theory (DFT) to the study of lattice dynamics and structural stability of scandium nitride ScN from the 3D bulk, the square 2D mono and multi-layers to the corresponding single and multi-walled zigzag nanotubes. An effective variety of energetic and geometric parameters as well as electronic and vibrational contributions to the polarizability are established. For all forms, dynamic stability is analyzed via vibrational studies through the simulation of their IR and Raman spectra by using a coupled perturbed Kohn-Sham and Hartree-Fock (CPKS/HF) computational approach. The mechanical response is further achieved by computing their elastic constants that satisfy the mechanical stability criterion. Upon building the 2D square multilayers, a noticeable IR and Raman active modes are generated with the interlayer distance that breaks inversion symmetry and alters the lattice dynamics. By increasing the number of layers, Eu modes become softer and shift toward lower wavelengths while A2u modes harden with a red shift owing to mechanical deformations that occur between layers. The vibrational active modes of (n,0) ScN square single walled nanotubes are found to be connected with those of the square monolayer as the 1D → 2D transition is approached. The dynamical and structural stability of all forms suggest interesting possibilities for engineering the physical properties of scandium nitride and impact the fabrication of new potential optoelectronic devices.
期刊介绍:
Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy.
Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications.
Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.