Sulfidation adjust the valence states of metal ions enhancing alkaline seawater OER catalytic activity and stability for PBA−derived self–supporting NiFe sulfide

IF 4.6 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Materials Science in Semiconductor Processing Pub Date : 2025-06-15 Epub Date: 2025-02-19 DOI:10.1016/j.mssp.2025.109396
Xuan Tong , Haiyang Xu , Shengjie Wei , Dingcheng Sun , Shan Lin , Hangyu Zhou , Xu Ji , Yue Yang , Le Zhang
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Abstract

Seawater, a prevalent resource, is gaining attention as a substitute for freshwater in hydrogen electrolysis. Nonetheless, the corrosion resistance of the anode to chloride ions still faces challenges. In this paper, NiFe PBA-S/NF was grown on nickel foam to promote effective electron conduction between the substrate and the catalyst, and the catalyst was enriched with redox reaction by adjusting the valence state of metal ions through sulfidation, which was beneficial to electrocatalytic kinetics and durability. Notably, it exhibited excellent performance in alkaline simulated seawater electrolytes, with an overpotential of 247 mV at 100 mA cm−2 and remained stable for more than 55 h. In addition, we evaluated the effect of Cl ion concentration on catalyst performance and observed that the catalyst exhibited higher OER activity in alkaline simulated seawater with higher concentrations of Cl. These results provide a solid experimental foundation for designing economically efficient seawater corrosion resistant electrolytic catalysts.

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硫化作用调节了金属离子的价态,提高了PBA−衍生的自支撑NiFe硫化物的碱性海水OER催化活性和稳定性
海水作为一种普遍存在的资源,在氢电解中作为淡水的替代品正受到人们的关注。尽管如此,阳极对氯离子的耐腐蚀性仍然面临挑战。本文将NiFe PBA-S/NF生长在泡沫镍上,促进底物与催化剂之间有效的电子传导,并通过硫化作用调节金属离子的价态,使催化剂富集氧化还原反应,有利于电催化动力学和耐久性。值得注意的是,它在碱性模拟海水电解质中表现出优异的性能,在100 mA cm - 2下的过电位为247 mV,并且保持稳定超过55 h。此外,我们评估了Cl−离子浓度对催化剂性能的影响,发现催化剂在Cl−浓度较高的碱性模拟海水中表现出更高的OER活性。这些结果为设计经济高效的耐海水腐蚀电解催化剂提供了坚实的实验基础。
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来源期刊
Materials Science in Semiconductor Processing
Materials Science in Semiconductor Processing 工程技术-材料科学:综合
CiteScore
8.00
自引率
4.90%
发文量
780
审稿时长
42 days
期刊介绍: Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.
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