Four-Mask Technique for Manufacturing the Perovskite-on-Silicon Sensor Array for Ultraviolet Light Imaging

Abstract

Perovskite-based image sensors are widely explored and recognized as the technology of choice for future optoelectronics. Suffering from the incompatibility between perovskite and conventional lithography technology, the challenges of developing high-resolution image sensors come from how to pattern the perovskite film with high precision and integrate it with pixel circuits. Recently, a four-mask technique for manufacturing perovskite-on-silicon sensor arrays, which are composed of a pixeled perovskite film and a planar crossbar circuit is demonstrated. Patterning precision for perovskite films attained 2 µm, ranking top among the previous research. The circuit is also proven to have the highest level of integration, theoretically. A proof-of-concept image sensor showing the first demonstration of monolithic integration of patterned perovskite film with the bottom pixel circuit is successfully made public. Electro-optical performance of its pixels is further characterized and showed high uniformity, benefitting the image sensor in capturing the input light distribution with good spatial resolution. This work has thus set a milestone for perovskite-based image sensors and showed the potential of perovskites in micro-nanoelectronics.