High-Performance Gate-All-Around Field Effect Transistors Based on Orderly Arrays of Catalytic Si Nanowire Channels

IF 26.6 1区材料科学 Q1 Engineering Nano-Micro Letters Pub Date : 2025-02-19 DOI:10.1007/s40820-025-01674-8

Wei Liao, Wentao Qian, Junyang An, Lei Liang, Zhiyan Hu, Junzhuan Wang, Linwei Yu

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Abstract

Highlights

A high-density array of orderly silicon nanowires (SiNWs) was grown in precise locations, with diameter of D_NW = 22.4 ± 2.4 nm and interwire spacing of 90 nm.
A special suspension-contact protocol has been developed to reliably suspend the in-plane solid-liquid-solid SiNWs to serve as ultrathin quasi-1D channels for gate-all-around field-effect transistors (GAA-FETs).
By optimizing the source/drain metal contacts, high-performance catalytical GAA-FETs have been successfully demonstrated, achieving a high on/off current ratio of 10⁷ and a steep subthreshold swing of 66 mV dec^-1.

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来源期刊

Nano-Micro Letters NANOSCIENCE & NANOTECHNOLOGY-MATERIALS SCIENCE, MULTIDISCIPLINARY

CiteScore

32.60

自引率

4.90%

发文量

981

审稿时长

1.1 months

期刊介绍： Nano-Micro Letters is a peer-reviewed, international, interdisciplinary, and open-access journal published under the SpringerOpen brand. Nano-Micro Letters focuses on the science, experiments, engineering, technologies, and applications of nano- or microscale structures and systems in various fields such as physics, chemistry, biology, material science, and pharmacy.It also explores the expanding interfaces between these fields. Nano-Micro Letters particularly emphasizes the bottom-up approach in the length scale from nano to micro. This approach is crucial for achieving industrial applications in nanotechnology, as it involves the assembly, modification, and control of nanostructures on a microscale.