Optical transmittance, optical homogeneity, HRXRD and third-order NLO properties of an organic 1H-benzotriazole salicylic acid (BHSA) single crystals

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Materials Science: Materials in Electronics Pub Date : 2025-02-19 DOI:10.1007/s10854-025-14415-9
T. Kamalesh, P. Karuppasamy, Muthu Senthil Pandian, G. Durgababu, V. Mohankumar, V. Kayalvizhi, Mohd Afzal, RO. MU. Jauhar
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Abstract

The single crystals of an organic 1H-benzotriazole salicylic acid (BHSA) were harvested adopting solution growth method (SEST) and the characterizations carried out in the subsequent sections emphasize that it is reported for the first time in the literature with regards to the title crystal. The structural parameters of the grown crystals were assessed using XRD technique. The presence of internal structural grain boundaries was analyzed using high-resolution XRD (HRXRD) along (1 0 -1) plane. The vibrational assignments in the material were assessed using Fourier transform infrared (FTIR) analysis. The optical transmittance is found to be 67% with its cut-off and bandgap to be 339 nm and 3.55 eV, respectively. The stability as assessed by TGA-DTA is found to be 131 °C. The density of etch pits were 57.6 × 103 cm−2 for 4 s, 40 × 103 cm−2 for 6 s. Optical homogeneity has been analysed from birefringence interferometry. Brewster’s angle method was adopted to find the refractive index of the title material. Z-scan technique revealed the third-order nonlinear optical properties of the BHSA crystal.

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有机1h -苯并三唑水杨酸(BHSA)单晶的光学透射率、光学均匀性、HRXRD和三阶NLO性质
采用溶液生长法获得有机1h -苯并三唑水杨酸(BHSA)的单晶,在后续章节中进行的表征强调该晶体在文献中为首次报道。利用XRD技术对生长晶体的结构参数进行了评价。利用高分辨率XRD (HRXRD)沿(10 -1)面分析了内部结构晶界的存在。利用傅里叶变换红外(FTIR)分析评估了材料的振动分配。光透过率为67%,截止波长为339 nm,带隙为3.55 eV。经热重-差热分析,其稳定性为131°C。蚀坑密度分别为57.6 × 103 cm−2和40 × 103 cm−2。用双折射干涉法分析了光学均匀性。采用布鲁斯特角度法求出标题材料的折射率。z -扫描技术揭示了BHSA晶体的三阶非线性光学性质。
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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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