{"title":"Growing single crystals of molybdenum disulfide at scale","authors":"Katharina Zeissler","doi":"10.1038/s41928-025-01358-6","DOIUrl":null,"url":null,"abstract":"<p>The researchers — who are based at the University of Science and Technology Beijing — created a two-dimensional liquid precursor film on a molten glass substrate using the etching reaction between oxygen and a pre-deposited polycrystalline MoS<sub>2</sub> film and an annealing process, followed by an ultrafast sulfuration process. The single crystalline domains can reach a scale of 1.5 cm with a defect density of 2.9 × 10<sup>12</sup> cm<sup>–2</sup>. With the material, the team fabricated an array of 192 field-effect transistors with a yield of around 96%; the devices exhibited an average mobility of 55 cm<sup>2</sup> V<sup>–1</sup> s<sup>–1</sup>, an average subthreshold swing of 110 mV dec<sup>–1</sup> and an average threshold voltage of 0.2 V.</p><p><b>Original reference:</b> <i>Nat. Mater</i>. <b>24</b>, 188–196 (2025)</p>","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"1 1","pages":""},"PeriodicalIF":33.7000,"publicationDate":"2025-02-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nature Electronics","FirstCategoryId":"5","ListUrlMain":"https://doi.org/10.1038/s41928-025-01358-6","RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
The researchers — who are based at the University of Science and Technology Beijing — created a two-dimensional liquid precursor film on a molten glass substrate using the etching reaction between oxygen and a pre-deposited polycrystalline MoS2 film and an annealing process, followed by an ultrafast sulfuration process. The single crystalline domains can reach a scale of 1.5 cm with a defect density of 2.9 × 1012 cm–2. With the material, the team fabricated an array of 192 field-effect transistors with a yield of around 96%; the devices exhibited an average mobility of 55 cm2 V–1 s–1, an average subthreshold swing of 110 mV dec–1 and an average threshold voltage of 0.2 V.
期刊介绍：
Nature Electronics is a comprehensive journal that publishes both fundamental and applied research in the field of electronics. It encompasses a wide range of topics, including the study of new phenomena and devices, the design and construction of electronic circuits, and the practical applications of electronics. In addition, the journal explores the commercial and industrial aspects of electronics research.
The primary focus of Nature Electronics is on the development of technology and its potential impact on society. The journal incorporates the contributions of scientists, engineers, and industry professionals, offering a platform for their research findings. Moreover, Nature Electronics provides insightful commentary, thorough reviews, and analysis of the key issues that shape the field, as well as the technologies that are reshaping society.
Like all journals within the prestigious Nature brand, Nature Electronics upholds the highest standards of quality. It maintains a dedicated team of professional editors and follows a fair and rigorous peer-review process. The journal also ensures impeccable copy-editing and production, enabling swift publication. Additionally, Nature Electronics prides itself on its editorial independence, ensuring unbiased and impartial reporting.
In summary, Nature Electronics is a leading journal that publishes cutting-edge research in electronics. With its multidisciplinary approach and commitment to excellence, the journal serves as a valuable resource for scientists, engineers, and industry professionals seeking to stay at the forefront of advancements in the field.
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