Effect and mechanism of vacuum melting on impurity elements, pores and inclusions in pure copper

IF 3.8 2区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY Vacuum Pub Date : 2025-02-18 DOI:10.1016/j.vacuum.2025.114140
Lei Ba , Haonan Yu , Rui Fu , Jing Wang , Renshu Yang
{"title":"Effect and mechanism of vacuum melting on impurity elements, pores and inclusions in pure copper","authors":"Lei Ba ,&nbsp;Haonan Yu ,&nbsp;Rui Fu ,&nbsp;Jing Wang ,&nbsp;Renshu Yang","doi":"10.1016/j.vacuum.2025.114140","DOIUrl":null,"url":null,"abstract":"<div><div>In this paper, the pure copper melt was purified by vacuum melting technology, and the purity and three-dimensional high-precision X-ray computed tomography morphology(3D-CT) changes of pore and inclusion defects were comprehensively observed. The total amount of impurity elements decrease from 178.74 ppm to 49.04 ppm, and the removal rate of impurity elements reached 72.6 %, the purity is improved from 3N to 4N. The hydrogen (H) content is reduced from 3.2 ppm to 0.9 ppm and the oxygen (O) content is reduced from 25.5 ppm to 11.7 ppm. The H and O contents are reduced by 71.9 % and 54.1 %, and the porosity and volume fraction of inclusion defects are reduced by 65.9 % and 52.2 %, respectively. In the vacuum melting process, the impurity elements are removed by volatilization, and the generation of inclusions can be reduced at the same time; H is precipitated to form hydrogen bubbles floating up to remove; O is formed into oxide inclusions gradually floating up to the surface of the melt. Vacuum melting technology can improve the purity of pure copper and greatly reduce the pore and inclusion defects in the cast billet.</div></div>","PeriodicalId":23559,"journal":{"name":"Vacuum","volume":"235 ","pages":"Article 114140"},"PeriodicalIF":3.8000,"publicationDate":"2025-02-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Vacuum","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0042207X25001307","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0

Abstract

In this paper, the pure copper melt was purified by vacuum melting technology, and the purity and three-dimensional high-precision X-ray computed tomography morphology(3D-CT) changes of pore and inclusion defects were comprehensively observed. The total amount of impurity elements decrease from 178.74 ppm to 49.04 ppm, and the removal rate of impurity elements reached 72.6 %, the purity is improved from 3N to 4N. The hydrogen (H) content is reduced from 3.2 ppm to 0.9 ppm and the oxygen (O) content is reduced from 25.5 ppm to 11.7 ppm. The H and O contents are reduced by 71.9 % and 54.1 %, and the porosity and volume fraction of inclusion defects are reduced by 65.9 % and 52.2 %, respectively. In the vacuum melting process, the impurity elements are removed by volatilization, and the generation of inclusions can be reduced at the same time; H is precipitated to form hydrogen bubbles floating up to remove; O is formed into oxide inclusions gradually floating up to the surface of the melt. Vacuum melting technology can improve the purity of pure copper and greatly reduce the pore and inclusion defects in the cast billet.

Abstract Image

查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
求助全文
约1分钟内获得全文 去求助
来源期刊
Vacuum
Vacuum 工程技术-材料科学:综合
CiteScore
6.80
自引率
17.50%
发文量
0
审稿时长
34 days
期刊介绍: Vacuum is an international rapid publications journal with a focus on short communication. All papers are peer-reviewed, with the review process for short communication geared towards very fast turnaround times. The journal also published full research papers, thematic issues and selected papers from leading conferences. A report in Vacuum should represent a major advance in an area that involves a controlled environment at pressures of one atmosphere or below. The scope of the journal includes: 1. Vacuum; original developments in vacuum pumping and instrumentation, vacuum measurement, vacuum gas dynamics, gas-surface interactions, surface treatment for UHV applications and low outgassing, vacuum melting, sintering, and vacuum metrology. Technology and solutions for large-scale facilities (e.g., particle accelerators and fusion devices). New instrumentation ( e.g., detectors and electron microscopes). 2. Plasma science; advances in PVD, CVD, plasma-assisted CVD, ion sources, deposition processes and analysis. 3. Surface science; surface engineering, surface chemistry, surface analysis, crystal growth, ion-surface interactions and etching, nanometer-scale processing, surface modification. 4. Materials science; novel functional or structural materials. Metals, ceramics, and polymers. Experiments, simulations, and modelling for understanding structure-property relationships. Thin films and coatings. Nanostructures and ion implantation.
期刊最新文献
Investigation of electronic structure, photoelectric and thermodynamic properties of Mg-doped β-Ga2O3 using first-principles calculation Effect and mechanism of vacuum melting on impurity elements, pores and inclusions in pure copper Stability of Geiger-Müller counter characteristics under operating conditions Structural, mechanical and thermal properties of twisted bilayer MoS2: First-principles calculations Influence of Ge precursors toward atomic layer deposition of germanium tellurides: A DFT study
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1