Lei Ba , Haonan Yu , Rui Fu , Jing Wang , Renshu Yang
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引用次数: 0
Abstract
In this paper, the pure copper melt was purified by vacuum melting technology, and the purity and three-dimensional high-precision X-ray computed tomography morphology(3D-CT) changes of pore and inclusion defects were comprehensively observed. The total amount of impurity elements decrease from 178.74 ppm to 49.04 ppm, and the removal rate of impurity elements reached 72.6 %, the purity is improved from 3N to 4N. The hydrogen (H) content is reduced from 3.2 ppm to 0.9 ppm and the oxygen (O) content is reduced from 25.5 ppm to 11.7 ppm. The H and O contents are reduced by 71.9 % and 54.1 %, and the porosity and volume fraction of inclusion defects are reduced by 65.9 % and 52.2 %, respectively. In the vacuum melting process, the impurity elements are removed by volatilization, and the generation of inclusions can be reduced at the same time; H is precipitated to form hydrogen bubbles floating up to remove; O is formed into oxide inclusions gradually floating up to the surface of the melt. Vacuum melting technology can improve the purity of pure copper and greatly reduce the pore and inclusion defects in the cast billet.
期刊介绍:
Vacuum is an international rapid publications journal with a focus on short communication. All papers are peer-reviewed, with the review process for short communication geared towards very fast turnaround times. The journal also published full research papers, thematic issues and selected papers from leading conferences.
A report in Vacuum should represent a major advance in an area that involves a controlled environment at pressures of one atmosphere or below.
The scope of the journal includes:
1. Vacuum; original developments in vacuum pumping and instrumentation, vacuum measurement, vacuum gas dynamics, gas-surface interactions, surface treatment for UHV applications and low outgassing, vacuum melting, sintering, and vacuum metrology. Technology and solutions for large-scale facilities (e.g., particle accelerators and fusion devices). New instrumentation ( e.g., detectors and electron microscopes).
2. Plasma science; advances in PVD, CVD, plasma-assisted CVD, ion sources, deposition processes and analysis.
3. Surface science; surface engineering, surface chemistry, surface analysis, crystal growth, ion-surface interactions and etching, nanometer-scale processing, surface modification.
4. Materials science; novel functional or structural materials. Metals, ceramics, and polymers. Experiments, simulations, and modelling for understanding structure-property relationships. Thin films and coatings. Nanostructures and ion implantation.