Yi Zhang, Yaohang Gu, Shuo Wang, Xiaoyan Zhang, Xiwei Qi
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引用次数: 0
Abstract
Lead-free relaxor ferroelectrics (RFEs) have great potential applications in dielectric ceramic capacitors due to their distinguished energy storage performance, such as power pulse devices, manufacturing motors, sensors, and more. However, achieving high energy density and high efficiency simultaneously is a major challenge for practical applications. The performance of a capacitor depends largely on the interface between metal electrode and ceramics, which is related to the transfer of charge carrier process. In this work, the relaxation degree and defect dipole are manipulated by entropy manipulation and cation defect, while the surface micro-region area defect control is caused by the surface buried firing calcination process. We have designed and synthesized the performances of all the series of BaTiO3-basedperovskite ceramics as well as surface cation defect modification such as BaTiO3, Ba0.95TiO3, (Ba0.95Sr0.05)TiO3, (Ba0.95-3x/2Sr0.05Bix)TiO3, resurfaced (Ba0.95Sr0.05)TiO3, and resurfaced (Ba0.95-3x/2Sr0.05Bix)TiO3. Surface micro-region lattice distortions caused by the surface cation-defects reduce the carrier diffusion between the metal electrode and the BaTiO3-basedperovskite ceramic samples, which diminishes the polarization hysteresis and improving the energy storage efficiency. Specifically, the surface reconstructed (Ba0.8Sr0.05Bi0.1)TiO3 ceramics exhibited excellent breakdown field strength characteristics (Eb = 155 kV·cm−1) and minimal hysteresis residual polarization characteristics (Pr = 1.9 μC·cm−2), resulting in the largest storage density (Wrec = 1.193 J/cm3) and highest efficiency (η = 83.41%), indicating the general efficacy of our surface cation-defects engineering strategy, which provided new insights for the design of ceramic components.
期刊介绍:
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.