Integration of NiWO4 nanoparticles with multi-walled carbon nanotubes for next-generation energy storage

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Materials Science: Materials in Electronics Pub Date : 2025-02-22 DOI:10.1007/s10854-025-14437-3
R. Suganesh, G. Venkatesh, K. M. Prabu, G. Periyasami, M. Priyadharshini, R. Ranjith, K. L. Meghanathan
{"title":"Integration of NiWO4 nanoparticles with multi-walled carbon nanotubes for next-generation energy storage","authors":"R. Suganesh,&nbsp;G. Venkatesh,&nbsp;K. M. Prabu,&nbsp;G. Periyasami,&nbsp;M. Priyadharshini,&nbsp;R. Ranjith,&nbsp;K. L. Meghanathan","doi":"10.1007/s10854-025-14437-3","DOIUrl":null,"url":null,"abstract":"<div><p>The demand for supercapacitors with high energy and power densities has accelerated the search for efficient electrode materials. In this study, we prepared a binary composite of multi-walled carbon nanotubes (MWCNT) and nickel tungstate (NiWO<sub>4</sub>) using a simple hydrothermal method, achieving a specific capacitance of 885 F g<sup>−1</sup> at 1 A g<sup>−1</sup> with strong cyclic stability, maintaining 86% capacity after 5000 cycles. Electrochemical analysis revealed a shift in the charge storage mechanism of MWCNT/NiWO<sub>4</sub> composite with “<i>b</i>-values” of 0.84 to low indicating a capacitive-dominant behavior with increased scan rate likely due to the formation of a double-layer and the presence of MWCNTs. The composite exhibited enhanced conductivity with a charge transfer resistance (<i>R</i><sub>ct</sub>) of 0.9 Ω compared to 3.2 Ω for NiWO<sub>4</sub> alone. This study highlights the potential of MWCNT/NiWO<sub>4</sub> as a cost-effective, high-performance electrode material for next-generation supercapacitors.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 6","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2025-02-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-025-14437-3","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

Abstract

The demand for supercapacitors with high energy and power densities has accelerated the search for efficient electrode materials. In this study, we prepared a binary composite of multi-walled carbon nanotubes (MWCNT) and nickel tungstate (NiWO4) using a simple hydrothermal method, achieving a specific capacitance of 885 F g−1 at 1 A g−1 with strong cyclic stability, maintaining 86% capacity after 5000 cycles. Electrochemical analysis revealed a shift in the charge storage mechanism of MWCNT/NiWO4 composite with “b-values” of 0.84 to low indicating a capacitive-dominant behavior with increased scan rate likely due to the formation of a double-layer and the presence of MWCNTs. The composite exhibited enhanced conductivity with a charge transfer resistance (Rct) of 0.9 Ω compared to 3.2 Ω for NiWO4 alone. This study highlights the potential of MWCNT/NiWO4 as a cost-effective, high-performance electrode material for next-generation supercapacitors.

查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
NiWO4纳米颗粒与多壁碳纳米管集成用于下一代储能
对具有高能量和功率密度的超级电容器的需求加速了对高效电极材料的研究。在本研究中,我们采用简单的水热法制备了多壁碳纳米管(MWCNT)和钨酸镍(NiWO4)二元复合材料,在1 a g−1时获得了885 F g−1的比电容,具有很强的循环稳定性,在5000次循环后保持86%的容量。电化学分析表明,MWCNT/NiWO4复合材料的电荷存储机制发生了转变,“b值”从0.84降至较低,表明随着扫描速率的增加,MWCNT/NiWO4复合材料的电容性优势行为可能是由于双层结构的形成和MWCNTs的存在。与NiWO4单独的3.2 Ω相比,复合材料的电导率增强,电荷转移电阻(Rct)为0.9 Ω。这项研究强调了MWCNT/NiWO4作为下一代超级电容器的经济高效电极材料的潜力。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
期刊最新文献
Biowaste to energy transition: a novel hybrid synergistic material for energy generation from PV cells Enhancing polycrystalline silicon solar cell efficiency with tin oxide antireflective coatings: a morphological, optical, electrical, and thermal study Seed-layer-assisted growth of AgBiS\(_{2}\) thin films by chemical bath deposition for photovoltaics Humidity modulated dielectric properties of morphology controlled Ce-doped ZnCo2O4 Unravelling the impact of potassium hydroxide concentration on electrochemical performance of CoV2O6 for energy storage
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1