Investigation of the memristive properties of the device form and thin film form of BST and CeO2 films with different arrays

IF 2.8 4区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Materials Science: Materials in Electronics Pub Date : 2025-02-27 DOI:10.1007/s10854-025-14460-4

Ozlem Akin, Hasan Efeoglu

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引用次数: 0

Abstract

In this study, a memristor structure known as a missing circuit element was produced. This study consists of a total of six samples in both thin film and device form with different arrays of BST film and CeO₂ film on SiO₂/Si substrate. The effects of different arrays and device forms of these two films on memristive behavior were investigated. It was observed that the structures exhibited memristive behavior due to the difference in ion mobility in films with different dielectric constants. It was also observed that the structures changed their memristive behavior in the annealing process performed at different temperatures. It was observed that the memristive behaviors examined imitated the connection strength of artificial synapses, and they are suitable for the production of multi-bit memristors or analog memristors suitable for the creation of artificial neuromorphic networks.

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来源期刊

Journal of Materials Science: Materials in Electronics 工程技术-材料科学：综合

CiteScore

5.00

自引率

7.10%

发文量

1931

审稿时长

2 months

期刊介绍： The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.