Investigation of the memristive properties of the device form and thin film form of BST and CeO2 films with different arrays

IF 2.8 4区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Materials Science: Materials in Electronics Pub Date : 2025-02-27 DOI:10.1007/s10854-025-14460-4

Ozlem Akin, Hasan Efeoglu

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Abstract

In this study, a memristor structure known as a missing circuit element was produced. This study consists of a total of six samples in both thin film and device form with different arrays of BST film and CeO₂ film on SiO₂/Si substrate. The effects of different arrays and device forms of these two films on memristive behavior were investigated. It was observed that the structures exhibited memristive behavior due to the difference in ion mobility in films with different dielectric constants. It was also observed that the structures changed their memristive behavior in the annealing process performed at different temperatures. It was observed that the memristive behaviors examined imitated the connection strength of artificial synapses, and they are suitable for the production of multi-bit memristors or analog memristors suitable for the creation of artificial neuromorphic networks.

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不同排列的BST和CeO2薄膜的器件形式和薄膜形式的记忆性研究

在这项研究中，一种被称为缺失电路元件的忆阻器结构被制造出来。本研究共包括6个薄膜和器件形式的样品，在SiO2/Si衬底上有不同的BST薄膜和CeO2薄膜阵列。研究了这两种薄膜的不同阵列和器件形式对忆阻行为的影响。在不同介电常数的薄膜中，由于离子迁移率的不同，结构表现出忆阻性。在不同温度下的退火过程中，结构的记忆行为发生了变化。结果表明，所检测的忆阻行为模拟了人工突触的连接强度，适用于制作多比特忆阻器或模拟忆阻器，适用于创建人工神经形态网络。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Journal of Materials Science: Materials in Electronics 工程技术-材料科学：综合

CiteScore

5.00

自引率

7.10%

发文量

1931

审稿时长

2 months

期刊介绍： The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.