Fe-incorporated NiSe2 nanostructures as an efficient electrode material for the enhanced supercapacitor applications

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Materials Science: Materials in Electronics Pub Date : 2025-03-01 DOI:10.1007/s10854-025-14478-8
S. Saranya, S. Suthakaran, S. Dhanapandian
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Abstract

A nickel diselenide and bimetallic nickel iron diselenide were prepared in the presence of hydrazine hydrate as a reductant by a simple hydrothermal method. The prepared composites were characterized by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR), High-resolution scanning electron microscopy (HRSEM), High-resolution Tunneling electron microscopy (HRTEM), X-ray photoelectron spectroscopy (XPS), Vibrating sample magnetometer, and Cyclic voltammetry. The XRD confirmed the presence of cubic and orthorhombic phases of NiSe2 and NiFeSe2, respectively. HRSEM and HRTEM images showed the spherical morphology of both materials. This specific morphology allowed for efficient electron transfer, shortened ion diffusion pathways, and greater ion penetration into the electrode materials, which collectively contributed to enhanced electrochemical performance. The optimized NiFeSe2 composite recorded a notable specific capacitance of 1016 Fg−1 at a scan rate of 2 mV−1 and its magnetic properties are indicative of antiferromagnetism.

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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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