Effect of electron transport layer thickness and characteristics behaviour of hybrid copper indium gallium selenide thin film solar cells

IF 7.9 2区 工程技术 Q1 CHEMISTRY, PHYSICAL Journal of Power Sources Pub Date : 2025-05-30 Epub Date: 2025-03-02 DOI:10.1016/j.jpowsour.2025.236657
Manzoore Elahi M. Soudagar , Aman Sharma , Nagabhooshanam Nagarajan , Mohanavel Vinayagam , R. Venkatesh , Saleh Hussein Salmen , Tahani Awad Alahmadi
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Abstract

Copper Indium Gallium Selenide (CIGS) thin-film solar cells are pivotal due to their remarkable absorption coefficient and significant potential for cost-effective solar energy conversion. A key factor influencing their performance is the thickness of the electron transport layer (ETL). This study examines the impact of varying zinc oxide (ZnO) ETL thicknesses of 25, 50, 75, and 100 nm within a structured CIGS solar cell configuration of Fluorine-doped Tin Oxide (FTO)/ZnO/CIGS/Molybdenum Diselenide (MoSe2)/Molybdenum (Mo), fabricated using advanced radio frequency (RF) magnetron sputtering techniques. By exploring the relationship between ZnO ETL thickness and solar cell performance, we provide valuable insights into optimizing these technologies. X-ray diffraction analysis reveals the successful formation of various solar cell layers, showcased by distinct peaks in the diffraction pattern. Among the tested configurations, the 75 nm ZnO ETL shines through as the most effective, demonstrating superior optical and electrical properties compared to the thinner layers. Notably, the 75 nm ZnO ETL not only achieves a crystalline size of 42 nm and a transmittance of 55 % at an 800 nm wavelength but also delivers impressive electrical performance, with a short-circuit current density (Jsc) of 35.1 mA/cm2 and an open-circuit voltage (Voc) of 0.81 V. Furthermore, it exhibits strong absorption coefficients of 5.5 × 104 cm−1 at 3.5 eV and 8.1 × 104 cm−1 at 4.0 eV, along with a refractive index of 2.05. Additionally, with a conductivity of 0.45 × 10−3 S/cm and a resistivity of 2.22 × 102 Ω cm, this configuration underscores the potential for enhanced charge transport, light absorption, and overall efficiency in CIGS solar cells, making it a promising candidate for advancing solar technology. Moreover, increasing the ZnO ETL thickness in CIGS was found to improve thermal stability and improved conductivity at the cost of reduced transparency.

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铜铟硒化镓杂化薄膜太阳能电池电子传输层厚度及特性行为的影响
硒化铜铟镓(CIGS)薄膜太阳能电池由于其显著的吸收系数和具有成本效益的太阳能转换的巨大潜力而至关重要。影响其性能的关键因素是电子传输层的厚度。本研究考察了不同氧化锌(ZnO) ETL厚度(25、50、75和100 nm)对氟掺杂氧化锡(FTO)/ZnO/CIGS/钼二硒化钼(MoSe2)/钼(Mo)的CIGS太阳能电池结构的影响,该结构采用先进的射频(RF)磁控溅射技术制造。通过探索ZnO ETL厚度与太阳能电池性能之间的关系,我们为优化这些技术提供了有价值的见解。x射线衍射分析揭示了各种太阳能电池层的成功形成,在衍射图中显示出不同的峰。在测试的配置中,75 nm的ZnO ETL是最有效的,与较薄的层相比,显示出优越的光学和电学性能。值得注意的是,75 nm的ZnO ETL不仅在800 nm波长下实现了42 nm的晶体尺寸和55%的透射率,而且还提供了令人印象深刻的电性能,短路电流密度(Jsc)为35.1 mA/cm2,开路电压(Voc)为0.81 V。此外,它在3.5 eV和4.0 eV下的强吸收系数分别为5.5 × 104 cm−1和8.1 × 104 cm−1,折射率为2.05。此外,由于其电导率为0.45 × 10−3 S/cm,电阻率为2.22 × 102 Ω cm,这种结构强调了CIGS太阳能电池中增强电荷传输、光吸收和整体效率的潜力,使其成为推进太阳能技术的有希望的候选者。此外,增加CIGS中ZnO ETL的厚度可以提高热稳定性和导电性,但代价是降低透明度。
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来源期刊
Journal of Power Sources
Journal of Power Sources 工程技术-电化学
CiteScore
16.40
自引率
6.50%
发文量
1249
审稿时长
36 days
期刊介绍: The Journal of Power Sources is a publication catering to researchers and technologists interested in various aspects of the science, technology, and applications of electrochemical power sources. It covers original research and reviews on primary and secondary batteries, fuel cells, supercapacitors, and photo-electrochemical cells. Topics considered include the research, development and applications of nanomaterials and novel componentry for these devices. Examples of applications of these electrochemical power sources include: • Portable electronics • Electric and Hybrid Electric Vehicles • Uninterruptible Power Supply (UPS) systems • Storage of renewable energy • Satellites and deep space probes • Boats and ships, drones and aircrafts • Wearable energy storage systems
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