Investigation of LTPS and a-Si TFT pixel circuit for micro-light-emitting-triode with current gain

IF 1.9 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Microelectronics Journal Pub Date : 2025-02-26 DOI:10.1016/j.mejo.2025.106615

Keren Wang , Jinyu Ye , Wenjuan Su , Yibin Lin , Xiongtu Zhou , Jianpu Lin , Tailiang Guo , Chaoxing Wu , Yongai Zhang

{"title":"Investigation of LTPS and a-Si TFT pixel circuit for micro-light-emitting-triode with current gain","authors":"Keren Wang , Jinyu Ye , Wenjuan Su , Yibin Lin , Xiongtu Zhou , Jianpu Lin , Tailiang Guo , Chaoxing Wu , Yongai Zhang","doi":"10.1016/j.mejo.2025.106615","DOIUrl":null,"url":null,"abstract":"<div><div>The driving capability of Micro-LED displays based on thin film transistor (TFT) often falls short due to limited TFT current output performance. In this study, we propose a 6T2C pixel circuit for micro light-emitting-triode (Micro-LET), which integrates GaN-based LED and bipolar junction transistor (BJT) in a single chip vertically. The proposed pixel circuit, utilizing low-temperature polysilicon (LTPS) TFT, effectively compensates for threshold voltage shifts and mobility variations, thereby addressing the issue of pixel non-uniformity. Circuit simulation results demonstrate that the current error rates (CER) of the emission current are less than 4.71 % and 1.83 %, respectively, when subjected to ±0.5 V threshold voltage change and ±30 % mobility variation. Furthermore, the LTPS TFT can be extended to amorphous silicon (a-Si) TFT in the pixel circuit, showcasing its potential in enabling high-brightness Micro-LED displays driven by a-Si TFT technology with current amplification capabilities. These findings validate the feasibility of cost-effective and highly luminous Micro-LED displays while also alleviating concerns regarding overcapacity issues associated with a-Si TFT.</div></div>","PeriodicalId":49818,"journal":{"name":"Microelectronics Journal","volume":"158 ","pages":"Article 106615"},"PeriodicalIF":1.9000,"publicationDate":"2025-02-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microelectronics Journal","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1879239125000645","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

Abstract

The driving capability of Micro-LED displays based on thin film transistor (TFT) often falls short due to limited TFT current output performance. In this study, we propose a 6T2C pixel circuit for micro light-emitting-triode (Micro-LET), which integrates GaN-based LED and bipolar junction transistor (BJT) in a single chip vertically. The proposed pixel circuit, utilizing low-temperature polysilicon (LTPS) TFT, effectively compensates for threshold voltage shifts and mobility variations, thereby addressing the issue of pixel non-uniformity. Circuit simulation results demonstrate that the current error rates (CER) of the emission current are less than 4.71 % and 1.83 %, respectively, when subjected to ±0.5 V threshold voltage change and ±30 % mobility variation. Furthermore, the LTPS TFT can be extended to amorphous silicon (a-Si) TFT in the pixel circuit, showcasing its potential in enabling high-brightness Micro-LED displays driven by a-Si TFT technology with current amplification capabilities. These findings validate the feasibility of cost-effective and highly luminous Micro-LED displays while also alleviating concerns regarding overcapacity issues associated with a-Si TFT.

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

求助全文

约1分钟内获得全文去求助

来源期刊

Microelectronics Journal 工程技术-工程：电子与电气

CiteScore

4.00

自引率

27.30%

发文量

222

审稿时长

43 days

期刊介绍： Published since 1969, the Microelectronics Journal is an international forum for the dissemination of research and applications of microelectronic systems, circuits, and emerging technologies. Papers published in the Microelectronics Journal have undergone peer review to ensure originality, relevance, and timeliness. The journal thus provides a worldwide, regular, and comprehensive update on microelectronic circuits and systems. The Microelectronics Journal invites papers describing significant research and applications in all of the areas listed below. Comprehensive review/survey papers covering recent developments will also be considered. The Microelectronics Journal covers circuits and systems. This topic includes but is not limited to: Analog, digital, mixed, and RF circuits and related design methodologies; Logic, architectural, and system level synthesis; Testing, design for testability, built-in self-test; Area, power, and thermal analysis and design; Mixed-domain simulation and design; Embedded systems; Non-von Neumann computing and related technologies and circuits; Design and test of high complexity systems integration; SoC, NoC, SIP, and NIP design and test; 3-D integration design and analysis; Emerging device technologies and circuits, such as FinFETs, SETs, spintronics, SFQ, MTJ, etc. Application aspects such as signal and image processing including circuits for cryptography, sensors, and actuators including sensor networks, reliability and quality issues, and economic models are also welcome.