Preparation and properties of bilayer MoS2 with different stacking structures

Abstract

Herein, we propose a method for preparing MoS₂ bilayers (BL-MoS₂) with different stacking structures by controlling the amount of NaCl in the reaction. Atomic force microscopy (AFM) and scanning electron microscopy (SEM) showed clear stacking structures and boundaries. Raman spectroscopy and photoluminescence (PL) spectroscopy revealed a high degree of homogeneity of the stacked structures with a pronounced contrast between them. The BL-MoS₂ microstructure field effect transistors (FETs) with various stacked structures exhibited approximate electrical properties. Therefore, this work provides a reference for the fundamental research on the precise growth of BL-MoS₂ materials.