{"title":"A screening test of GaN-HEMTs for improvement of breakdown voltage uniformity","authors":"Wataru Saito, Shin-ichi Nishizawa","doi":"10.1016/j.microrel.2025.115643","DOIUrl":null,"url":null,"abstract":"<div><div>As a screening test recipe, burst unclamped inductive switching (UIS) test is proposed to improve breakdown voltage uniformity. One of the critical disadvantages of GaN-HEMTs is its lack of the UIS withstanding capability, because there is no removal structure of holes, which generated by the avalanche breakdown. Hence, at the screening in the mass-production, measurement of the avalanche breakdown voltage cannot be employed to reject low breakdown voltage devices due to catastrophic failure, and conventional static drain leakage current measurements are insufficient. This paper reports a screening test of GaN-HEMTs by repetitive overvoltage stress using burst UIS test. The experimental results show the repetitive overvoltage stress was needed to reject outliers with low breakdown voltage and optimum test current avoided to generate new outliers.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"168 ","pages":"Article 115643"},"PeriodicalIF":1.6000,"publicationDate":"2025-03-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microelectronics Reliability","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0026271425000563","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
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Abstract
As a screening test recipe, burst unclamped inductive switching (UIS) test is proposed to improve breakdown voltage uniformity. One of the critical disadvantages of GaN-HEMTs is its lack of the UIS withstanding capability, because there is no removal structure of holes, which generated by the avalanche breakdown. Hence, at the screening in the mass-production, measurement of the avalanche breakdown voltage cannot be employed to reject low breakdown voltage devices due to catastrophic failure, and conventional static drain leakage current measurements are insufficient. This paper reports a screening test of GaN-HEMTs by repetitive overvoltage stress using burst UIS test. The experimental results show the repetitive overvoltage stress was needed to reject outliers with low breakdown voltage and optimum test current avoided to generate new outliers.
期刊介绍：
Microelectronics Reliability, is dedicated to disseminating the latest research results and related information on the reliability of microelectronic devices, circuits and systems, from materials, process and manufacturing, to design, testing and operation. The coverage of the journal includes the following topics: measurement, understanding and analysis; evaluation and prediction; modelling and simulation; methodologies and mitigation. Papers which combine reliability with other important areas of microelectronics engineering, such as design, fabrication, integration, testing, and field operation will also be welcome, and practical papers reporting case studies in the field and specific application domains are particularly encouraged.
Most accepted papers will be published as Research Papers, describing significant advances and completed work. Papers reviewing important developing topics of general interest may be accepted for publication as Review Papers. Urgent communications of a more preliminary nature and short reports on completed practical work of current interest may be considered for publication as Research Notes. All contributions are subject to peer review by leading experts in the field.
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