{"title":"Evidence for double degradation regime in off-state stressed 100 V GaN transistors: From dielectric failure to subthreshold current increase","authors":"Riccardo Fraccaroli , Manuel Fregolent , Mirco Boito , Carlo De Santi , Eleonora Canato , Isabella Rossetto , Maria Eloisa Castagna , Cristina Miccoli , Alfio Russo , Ferdinando Iucolano , Alessio Pirani , Giansalvo Pizzo , Gaudenzio Meneghesso , Enrico Zanoni , Matteo Meneghini","doi":"10.1016/j.microrel.2025.115649","DOIUrl":null,"url":null,"abstract":"<div><div>We demonstrate the existence of two different degradation mechanisms for 100 V GaN transistors submitted to off-state stress. When the devices are stressed in strong pinch-off conditions, a high electric field falls on the dielectric between the source field plate and the channel, and a time dependent dielectric breakdown is observed. On the other hand, for weaker pinch-off, hot electrons trapping at the passivation surface can lower the electric field, leading to longer TTF. A second degradation mode is also observed, consisting in the gradual increase in off-state current, ascribed to positive charge trapping at defects spots.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"168 ","pages":"Article 115649"},"PeriodicalIF":1.9000,"publicationDate":"2025-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microelectronics Reliability","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0026271425000629","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"2025/3/7 0:00:00","PubModel":"Epub","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
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Abstract
We demonstrate the existence of two different degradation mechanisms for 100 V GaN transistors submitted to off-state stress. When the devices are stressed in strong pinch-off conditions, a high electric field falls on the dielectric between the source field plate and the channel, and a time dependent dielectric breakdown is observed. On the other hand, for weaker pinch-off, hot electrons trapping at the passivation surface can lower the electric field, leading to longer TTF. A second degradation mode is also observed, consisting in the gradual increase in off-state current, ascribed to positive charge trapping at defects spots.
期刊介绍：
Microelectronics Reliability, is dedicated to disseminating the latest research results and related information on the reliability of microelectronic devices, circuits and systems, from materials, process and manufacturing, to design, testing and operation. The coverage of the journal includes the following topics: measurement, understanding and analysis; evaluation and prediction; modelling and simulation; methodologies and mitigation. Papers which combine reliability with other important areas of microelectronics engineering, such as design, fabrication, integration, testing, and field operation will also be welcome, and practical papers reporting case studies in the field and specific application domains are particularly encouraged.
Most accepted papers will be published as Research Papers, describing significant advances and completed work. Papers reviewing important developing topics of general interest may be accepted for publication as Review Papers. Urgent communications of a more preliminary nature and short reports on completed practical work of current interest may be considered for publication as Research Notes. All contributions are subject to peer review by leading experts in the field.
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