A Low-Noise CMOS Transimpedance-Limiting Amplifier for Dynamic Range Extension.

IF 3 3区 工程技术 Q2 CHEMISTRY, ANALYTICAL Micromachines Pub Date : 2025-01-28 DOI:10.3390/mi16020153
Somi Park, Sunkyung Lee, Bobin Seo, Dukyoo Jung, Seonhan Choi, Sung-Min Park
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Abstract

This paper presents a low-noise CMOS transimpedance-limiting amplifier (CTLA) for application in LiDAR sensor systems. The proposed CTLA employs a dual-feedback architecture that combines the passive and active feedback mechanisms simultaneously, thereby enabling automatic limiting operations for input photocurrents exceeding 100 µApp (up to 1.06 mApp) without introducing signal distortions. This design methodology can eliminate the need for a power-hungry multi-stage limiting amplifier, hence significantly improving the power efficiency of LiDAR sensors. The practical implementation for this purpose is to insert a simple NMOS switch between the on-chip avalanche photodiode (APD) and the active feedback amplifier, which then can provide automatic on/off switching in response to variations of the input currents. In particular, the feedback resistor in the active feedback path should be carefully optimized to guarantee the circuit's robustness and stability. To validate its practicality, the proposed CTLA chips were fabricated in a 180 nm CMOS process, demonstrating a transimpedance gain of 88.8 dBΩ, a -3 dB bandwidth of 629 MHz, a noise current spectral density of 2.31 pA/√Hz, an input dynamic range of 56.6 dB, and a power dissipation of 23.6 mW from a single 1.8 V supply. The chip core was realized within a compact area of 180 × 50 µm2. The proposed CTLA shows a potential solution that is well-suited for power-efficient LiDAR sensor systems in real-world scenarios.

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一种用于动态范围扩展的低噪声CMOS跨阻放大器。
提出了一种应用于激光雷达传感器系统的低噪声CMOS限流放大器。所提出的CTLA采用双反馈架构,同时结合了被动和主动反馈机制,从而能够在输入光电流超过100µApp(高达1.06 mApp)时自动限制操作,而不会引起信号失真。这种设计方法可以消除对耗电的多级限制放大器的需求,从而显着提高激光雷达传感器的功率效率。为此目的的实际实现是在片上雪崩光电二极管(APD)和有源反馈放大器之间插入一个简单的NMOS开关,然后可以根据输入电流的变化提供自动开/关开关。特别是对有源反馈路径中的反馈电阻进行精心优化,以保证电路的鲁棒性和稳定性。为了验证其实用性,采用180 nm CMOS工艺制作了CTLA芯片,其跨阻增益为88.8 dBΩ, -3 dB带宽为629 MHz,噪声电流谱密度为2.31 pA/√Hz,输入动态范围为56.6 dB,单1.8 V电源功耗为23.6 mW。芯片核心在180 × 50µm2的紧凑区域内实现。提出的CTLA展示了一种潜在的解决方案,非常适合实际场景中的高能效激光雷达传感器系统。
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来源期刊
Micromachines
Micromachines NANOSCIENCE & NANOTECHNOLOGY-INSTRUMENTS & INSTRUMENTATION
CiteScore
5.20
自引率
14.70%
发文量
1862
审稿时长
16.31 days
期刊介绍: Micromachines (ISSN 2072-666X) is an international, peer-reviewed open access journal which provides an advanced forum for studies related to micro-scaled machines and micromachinery. It publishes reviews, regular research papers and short communications. Our aim is to encourage scientists to publish their experimental and theoretical results in as much detail as possible. There is no restriction on the length of the papers. The full experimental details must be provided so that the results can be reproduced.
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